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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUD42D/D Designer'sTM Data Sheet BUD42D POWER TRANSISTORS 4 AMPERES 650 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD42D is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suited to light ballast applications. Main features: * * * * Free Wheeling Diode built in Flat DC Current Gain Fast Switching Times and Tight Distribution "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads Two versions: * BUD42D-1: Case 369-07 for Insertion Mode * BUD42D: Case 369A-13 for Surface Mount Mode CASE 369-07 II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I III I I II II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Parameters Symbol VCEO VCBO VCES Value 350 650 650 9 4 8 1 2 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage VEBO IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous Base Current -- Peak (1) *Total Device Dissipation @ TC = 25_C *Derate above 25C Operating and Storage Temperature 25 0.2 Watt W/_C TJ, Tstg - 65 to +150 CASE 369A-13 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 6.7 0.265 _C TYPICAL GAIN THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds RJC RJA TL 5 71.4 260 _C/W _C 1.6 0.063 2.3 2.3 0.090 0.090 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer's is a trademark of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 30 Typical Gain @IC = 0.3 A, VCE = 1 V hFE 16 -- 1.6 0.063 0.118 .070 1.8 Typical Gain @IC = 1 A, VCE = 2 V hFE 13 -- 0.265 6.7 1 II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I I II I I IIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIII I I I I I I I II I I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIII II I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I BUD42D ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC SATURATION VOLTAGE SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = -2 V) Turn-Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Forward Diode Voltage (IEC = 1.0 Adc) DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) IC = 1 A IB1 = 200 mA VCC = 300 V IC = 400 mA IB1 = 40 mA VCC = 300 V Characteristic @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCE(dsat) VCEO(sus) VCE(sat) VBE(sat) Symbol VCBO VEBO ICEO IEBO ICES VEC hFE Toff Tf Min 650 350 4.6 8 10 9 0.35 0.6 0.75 1.3 2.1 4.7 2.8 3.2 0.85 Typ 780 430 0.9 0.2 13 12 12 6.55 Max 100 100 200 10 200 0.8 1.5 1.2 1 Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc s s V -- V 2 Motorola Bipolar Power Transistor Device Data BUD42D TYPICAL STATIC CHARACTERISTICS 100 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 25C 10 TJ = - 20C TJ = 125C TJ = 25C 10 TJ = - 20C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ VCE = 1 V Figure 2. DC Current Gain @ VCE = 5 V 3 TJ = 25C VCE , VOLTAGE (VOLTS) 2A 2 1.5 A 1A 1 0.4 A VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 1 TJ = 125C 0.1 TJ = - 20C TJ = 25C IC = 0.2 A 0 0.001 0.01 1 0.1 IB, BASE CURRENT (AMPS) 10 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 100 IC/IB = 8 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 TJ = 125C 1 TJ = - 20C 10 IC/IB = 10 TJ = - 20C TJ = 125C TJ = 25C 1 TJ = 25C 0.1 0.1 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 3 BUD42D TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 8 1 TJ = - 20C 1 T = - 20C J TJ = 125C TJ = 25C TJ = 125C TJ = 25C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base-Emitter Saturation Region Figure 8. Base-Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS) 10 1 TJ = - 20C 1 VEC(V) = - 20C VEC(V) = 125C VEC(V) = 25C TJ = 125C TJ = 25C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT 10 Figure 9. Base-Emitter Saturation Region Figure 10. Forward Diode Voltage 4 Motorola Bipolar Power Transistor Device Data BUD42D TYPICAL SWITCHING CHARACTERISTICS 1000 Cib C, CAPACITANCE (pF) 100 Cob 10 TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 900 800 700 600 500 400 TC = 25C 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA Figure 11. Capacitance Figure 12. BVCER = f(RBE) 800 700 600 t, TIME (ns) 500 400 300 200 100 0 0 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 TJ = 125C TJ = 25C hFE = 5 hFE = 10 IBon = IBoff VCC = 300 V PW = 40 s 9 IBon = IBoff VCC = 300 V PW = 40 s 6 t, TIME (ns) hFE = 5 3 TJ = 125C TJ = 25C 0 0 hFE = 10 2 1 0.5 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switching, ton Figure 14. Resistive Switching, toff 4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 3 t, TIME ( s) TJ = 125C 3 TJ = 25C t, TIME ( s) TJ = 25C 2 2 1 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 15. Inductive Storage Time, tsi @ hFE = 5 Figure 16. Inductive Storage Time, tsi @ hFE = 10 Motorola Bipolar Power Transistor Device Data 5 BUD42D TYPICAL SWITCHING CHARACTERISTICS 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 300 t, TIME (ns) tc 200 tfi t, TIME (ns) TJ = 125C TJ = 25C 200 TJ = 125C 250 TJ = 25C 150 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 100 100 0 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5 500 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 t, TIME ( m s) 5 Figure 18. Inductive Fall Time, tfi @ hFE = 10 400 t, TIME (ns) IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A TJ = 125C TJ = 25C 3 300 TJ = 25C 2 IC = 0.3 A 200 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 3 4 5 6 7 8 9 hFE, FORCED GAIN 10 11 12 Figure 19. Inductive Cross Over Time, tc @ hFE = 10 Figure 20. Inductive Storage Time, tsi 300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 300 CROSS-OVER TIME (ns) t fi , FALL TIME (ns) IC = 0.3 A IC = 1 A 200 IC = 0.3 A 200 IC = 1 A TJ = 125C TJ = 25C 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 100 2 4 TJ = 125C TJ = 25C 6 hFE, FORCED GAIN 8 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 10 Figure 21. Inductive Fall Time, tf Figure 22. Inductive Cross Over Time, tc 6 Motorola Bipolar Power Transistor Device Data BUD42D TYPICAL SWITCHING CHARACTERISTICS 3 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IB 1 & 2 = 200 mA t fr , FORWARD RECOVERY TIME (ns) 440 di/dt = 10 A/ms, TC = 25C 420 400 380 360 340 320 300 0 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 0 1 0.5 1.5 IF, FORWARD CURRENT (AMPS) 2 2.5 t, TIME ( m s) 500 mA 2 50 mA 100 mA 1.5 1 Figure 23. Inductive Storage Time, tsi Figure 24. Forward Recovery Time, tfr 10 VCE Dyn 1 ms Dyn 3 ms 6 0V 90% IB IB 1 ms 3 ms 2 0 0 TIME 2 4 TIME 6 8 Vclamp 4 IB 90% IB1 10% Vclamp tc 8 IC 90% IC tsi tfi 10% IC Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements Motorola Bipolar Power Transistor Device Data 7 BUD42D TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 Iout IB RB1 VCE IB1 IC PEAK 1 F -Voff VFRM VF VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED 0.1 VF tfr IF 10% IF Figure 27. tfr Measurement MAXIMUM RATINGS 10 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 5 ms dc 1 EXTENDED SOA 1 ms 10 ms 1 ms 4 5 TJ = 125C GAIN 4 LC = 500 mH 3 2 VBE(off) = -5 V VBE = 0 V 300 VBE(off) = -1.5 V 700 0.1 1 0 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area 8 Motorola Bipolar Power Transistor Device Data BUD42D 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 0.4 0.2 THERMAL DERATING 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 30. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1 D = 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 t2 DUTY CYCLE, D = t1/t2 t1 P(pk) RJC(t) = r(t) RJC RJC = 5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) Figure 31. Thermal Response Motorola Bipolar Power Transistor Device Data 9 BUD42D PACKAGE DIMENSIONS B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T CASE 369-07 ISSUE L -T- B V R 4 SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T M DIM A B C D E F G H J K L R S U V Z CASE 369A-13 ISSUE Z STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 10 Motorola Bipolar Power Transistor DeviceBUD42D/D Data |
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