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MURB1610CT/MURB1620CT
Vishay Lite-On Power Semiconductor
16A Surface Mount Super-Fast Rectifier
Features
D D D D
Glass passivated die construction Diffused juction Super-fast recovery time for high efficiency High current capability and low forward voltage drop
14455
D Surge overload rating to 100A peak D Low reverse leakage current D Plastic material - UL Recognition flammability
classification 94V-0
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage =Working peak reverse voltage =DC Blocking voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type MURB1610CT MURB1620CT TC=125C Symbol VRRM =VRWM =VR IFSM IFAV Tj=Tstg Value 100 200 100 16 -65...+150 Unit V V A A C
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to case Test Conditions IF=8A TA=25C TA=150C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD RthJC Min Typ Max 0.975 5 250 25 Unit V mA mA ns pF K/W
85 1.5
Rev. A2, 24-Jun-98
1 (4)
MURB1610CT/MURB1620CT
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 20 C D - Diode Capacitance ( pF ) 16 12 400
Tj = 25C
100
8
4
Resistive or inductive load
0 100
15409
10 125 150 175
15412
0.1
1.0
10
100
Tamb - Ambient Temperature ( C )
VR - Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100 IF - Forward Current ( A )
Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100 I R - Reverse Current ( mA )
10
Tj = 150C
10
1.0
Tj =75C
1.0
0.1
Tj = 25C
0.1 0.2
15410
0.01 0.6 1.0 1.4 VF - Forward Voltage ( V ) 0
15421
40
80
120
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
IFSM - Peak Forward Surge Current ( A ) 150 125 100 75 50 25 0
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
8.3 ms Single Half-Sine-Wave JEDEC method
1
10 Number of Cycles at 60 Hz
100
15411
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
MURB1610CT/MURB1620CT
Vishay Lite-On Power Semiconductor Dimensions in mm
14457
Case: D2PAK molded plastic Polarity: see diagram Approx. weight: 1.7 grams Mounting position: any
Rev. A2, 24-Jun-98
3 (4)
MURB1610CT/MURB1620CT
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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