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| MITSUBISHI SEMICONDUCTOR MGFC5213 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS (Ta=25 Degree C.) Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Gain Inpur Return Loss Out Put Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 1 dB Compression Point Gain Inpur Return Loss Out Put Return Loss Inter Modulation Level Test Conditions Vd=3.0V Vd=3.0V,Id=2.4mA Vd=3.0V,Id=4.8mA f=27.5-30.0 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* f=27.5-30.0 GHz, Vd1=Vd2=6.0V , Id1=360mA*,Id2=720mA* Pout=30dBm *:Ids at RF off Min. Limits Typ. Max. Unit mA mA V V dBm dB dB dB dBc 600 1200 -2.0 -2.0 30.0 11.0 22.0 10.0 10.0 960 1920 -1.0 -1.0 - IM3 - MGFC5213 Die Size and Bond Pad Position UNIT:um Vg1 Vg2 Vd1 Vd2 GND RF-in GND Vd1 GND RF-out GND Vg1 Vg2 Vd1 Vd2 130 275 865 1060 1560 1940(+0/-60) MITSUBISHI ELECTRIC |
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