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HVM100
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-470 (Z) Rev 0 September 1996 Features
* * * * High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVM100 Laser Mark T12 Package Code MPAK
Outline
3
2
1
(Top View)
1 Anode 2 NC 3 Cathode
HVM100
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -45A+125 Unit V C C
Electrical Characteristics (Ta = 25C)
Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C5 C8 Capacitance ratio Figure of merit ESD-Capability*1 n Q Min 15 Typ Max Unit V nA Test Condition IR = 10A VR =9V VR = 1V, f = 1 MHz VR = 5V, f = 1 MHz VR = 8V, f = 1 MHz
A\ A\ A\ A\ A\ A\ A\
A\
100
A\
421.5 A \ 73.2 20.4 16 200 80
524.6 pF 121.4 28.2
A\ A\ A\
A\ A\
V
C1/ C8 C = 450pF, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse.
A\
Notes 1. Failure criterion ; IR 100A at VR =9 V
HVM100
Main Characteristic
10
-8
Reverse current IR (A)
10
-9
10
-10
10
-11
10
-12
0
4
8
12
16
20
Reverse voltage VR (V) Fig.1 Reverse current Vs. Reverse voltage
f=1MHz
3
10
Capacitance C (pF)
10
2
10 -1 10
1.0 Reverse voltage VR (V)
10
Fig.2 Capacitance Vs. Reverse voltage
HVM100
Package Dimensions
Unit : mm
0.65 - 0.3
+ 0.1
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
T12
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 Anode 2 NC 3 Cathode Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) -- SC-59A 0.011
0.3
1.1 - 0.1
+ 0.2

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