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| ADE-208-046D(Z) HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer Rev. 4 Jul. 1994 Features * Proof against high voltage. * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Average rectified Junction temperature Storage temperature Operation temperature * Per one device Symbol VR Io* Tj Tstg Topr Value 10 15 100 -55 to +100 -40 to +85 Unit V mA C C C Electrical Characteristics (Ta = 25C) * Item Forward voltage Reverse current Capacitance Capacitance deviation Symbol Min VF1 350 VF2 IR1 IR2 C C 500 -- -- -- -- -- 30 Typ -- -- -- -- -- -- -- -- Max 420 580 0.2 10 0.85 0.10 10 -- Unit mV A pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V , f = 1 MHz VR = 0 V , f = 1 MHz IF = 10 mA ** C=200pF, Both forward and reverse direction 1 pulse Forward voltage deviation VF ESD Capability -- * Per one device ** Failure Criterion ; IR 400nA at VR = 2V HSM88AS 10-2 10-3 Forward current I F (A) Reverse current I R (A) 0 0.2 0.4 0.6 0.8 1.0 10 -4 10 -5 10 -6 10-5 -6 10 -7 10 10 -7 10 10 -8 10 -8 -9 10 -9 0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 5 10 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 15 f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSM88AS Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 1.9 0.3 2.8 + 0.1 - 0.3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 C1 1.5 0 - 0.10 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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