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| DATA SHEET MICRONAS HAL401 Linear Hall Effect Sensor IC Edition Sept. 14, 2004 6251-470-2DS MICRONAS HAL401 Contents Page 3 3 3 3 3 3 3 4 5 5 6 6 6 6 7 8 15 15 15 15 18 Section 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 4. 4.1. 4.2. 4.3. 5. Title Introduction Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Area Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Application Notes Ambient Temperature EMC and ESD Application Circuit Data Sheet History DATA SHEET 2 Micronas DATA SHEET HAL401 1.2.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.3. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C Linear Hall Effect Sensor IC in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL 401 is a Linear Hall Effect Sensors produced in CMOS technology. The sensor includes a temperaturecompensated Hall plate with choppered offset compensation, two linear output stages, and protection devices (see Fig. 2-1). The output voltage is proportional to the magnetic flux density through the hall plate. The choppered offset compensation leads to stable magnetic characteristics over supply voltage and temperature. The HAL 401 can be used for magnetic field measurements, current measurements, and detection of any mechanical movement. Very accurate angle measurements or distance measurements can also be done. The sensor is very robust and can be used in electrical and mechanical hostile environments. The sensor is designed for industrial and automotive applications and operates in the ambient temperature range from -40 C up to 150 C and is available in the SMD-package SOT89B-1. 1.1. Features: - switching offset compensation at 147 kHz - low magnetic offset - extremely sensitive - operates from 4.8 to 12 V supply voltage - wide temperature range TA = -40 C to +150 C - overvoltage protection - reverse voltage protection of VDD-pin - differential output - accurate absolute measurements of DC and low frequency magnetic fields - on-chip temperature compensation 1.2. Marking Code Type Temperature Range A HAL401 401A 401K K Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 4.1. on page 15 for details. 1.4. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A or K Package: SF for SOT89B-1 Type: 401 Example: HAL401SF-K Type: 401 Package: SOT89B-1 Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.5. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1 VDD 2 3 4 GND OUT1 OUT2 Fig. 1-1: Pin configuration Micronas 3 HAL401 2. Functional Description GND 4 DATA SHEET External filtering or integrating measurement can be done to eliminate the AC component of the signal. Resultingly, the influence of mechanical stress and temperature cycling is suppressed. No adjustment of magnetic offset is needed. The sensitivity is stabilized over a wide range of temperature and supply voltage due to internal voltage regulation and circuits for temperature compensation. Chopper Oscillator Temp. Dependent Bias Offset Compensation; Hallplate Switching Matrix Offset Compensation (see Fig. 2-2) The Hall Offset Voltage is the residual voltage measured in absence of a magnetic field (zero-field residual voltage). This voltage is caused by mechanical stress and can be modeled by a displacement of the connections for voltage measurement and/or current supply. OUT2 3 Protection Device VDD 1 OUT1 2 Fig. 2-1: Block diagram of the HAL 401 (top view) The Linear Hall Sensor measures constant and low frequency magnetic flux densities accurately. The differential output voltage VOUTDIF (difference of the voltages on pin 2 and pin 3) is proportional to the magnetic flux density passing vertically through the sensitive area of the chip. The common mode voltage VCM (average of the voltages on pin 2 and pin 3) of the differential output amplifier is a constant 2.2 V. The differential output voltage consists of two components due to the switching offset compensation technique. The average of the differential output voltage represents the magnetic flux density. This component is overlaid by a differential AC signal at a typical frequency of 147 kHz. The AC signal represents the internal offset voltages of amplifiers and hall plates that are influenced by mechanical stress and temperature cycling. Compensation of this kind of offset is done by cyclic commutating the connections for current flow and voltage measurement. - First cycle: The hall supply current flows between points 4 and 2. In the absence of a magnetic field, V13 is the Hall Offset Voltage (+VOffs). In case of a magnetic field, V13 is the sum of the Hall voltage (VH) and VOffs. V13 = VH + VOffs - Second cycle: The hall supply current flows between points 1 and 3. In the absence of a magnetic field, V24 is the Hall Offset Voltage with negative polarity (-VOffs). In case of a magnetic field, V24 is the difference of the Hall voltage (VH) and VOffs. V24 = VH - VOffs In the first cycle, the output shows the sum of the Hall voltage and the offset; in the second, the difference of both. The difference of the mean values of VOUT1 and VOUT2 (VOUTDIF) is equivalent to VHall. V Note: The numbers do not represent pin numbers. for Bu0 mT VOUT1 IC 1 VCM VOUTDIF/2 VOUTDIF VOUTDIF/2 3 VOUTAC VOUT2 1 4 IC 4 VOffs 2 VOffs 2 1/fCH = 6.7 s 3 V V a) Offset Voltage Fig. 2-2: Hall Offset Compensation 4 b) Switched Current Supply c) Output Voltage t Micronas DATA SHEET HAL401 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.039 g Micronas 5 HAL401 3.2. Dimensions of Sensitive Area 0.37 mm x 0.17 mm 3.3. Position of Sensitive Area SOT89B-1 y 0.95 mm nominal DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ TA Parameter Supply Voltage Output Voltage Continuous Output Current Junction Temperature Range Ambient Temperature at VDD = 5 V at VDD = 12 V Pin No. 1 2, 3 2, 3 Min. -12 -0.3 -5 -40 - - Max. 12 12 5 170 150 125 Unit V V mA C C C 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. 6 Micronas DATA SHEET HAL401 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol IO IO CL VDD B Parameter Continuous Output Current Continuous Output Current Load Capacitance Supply Voltage Magnetic Field Range Pin No. 2, 3 2, 3 2, 3 1 Min. -2.25 -1 - 4.8 -50 Max. 2.25 1 1 12 50 Unit mA mA nF V mT see Fig. 3-2 Remarks TJ = 25 C TJ = 170 C VDD 12 V 11.5 V power dissipation limit 8.0 V 6.8 V 4.8 V 4.5 V Fig. 3-2: Recommended Operating Supply Voltage Micronas EEEEEEEEEEEE EEEEEEEEEEEE EEEEEEEEEEEE EEEEEEEEEEEE EEEEEEEEEEEE EEEEEEEEEEEE EEEEEEEEEEEE -40 C 25 C min. VDD for specified sensitivity 125 C 150 C TA 7 HAL401 DATA SHEET 3.6. Characteristics at TJ = -40 C to +170 C , VDD = 4.8 V to 12 V, GND = 0 V at Recommended Operation Conditions (Fig. 3-2 for TA and VDD) as not otherwise specified in the column "Conditions". Typical characteristics for TJ = 25 C, VDD = 6.8 V and -50 mT < B < 50 mT Symbol IDD IDD VCM CMRR Parameter Supply Current Supply Current over Temperature Range Common Mode Output Voltage VCM = (VOUT1 + VOUT2 ) / 2 Common Mode Rejection Ratio Pin No. 1 1 Min. 11 9 Typ. 14.5 14.5 Max. 17.1 18.5 Unit mA mA Conditions TJ = 25 C, IOUT1,2 = 0 mA IOUT1,2 = 0 mA IOUT1,2 = 0 mA, IOUT1,2 = 0 mA, CMRR is limited by the influence of power dissipation. -50 mT < B < 50 mT TJ = 25 C -50 mT < B < 50 mT 2, 3 2.1 2.2 2.3 V 2, 3 -2.5 0 2.5 mV/V SB SB Boffset BOFFSET/ T BW NLdif NLsingle fCH VOUTACpp nmeff fCflicker fCflicker ROUT ROUT RthJSB case SOT89B-1 1) Differential Magnetic Sensitivity 2-3 42 48.5 55 mV/mT Differential Magnetic Sensitivity over Temperature Range Magnetic Offset over Temperature Magnetic Offset Change 2-3 37.5 46.5 55 mV/mT 2-3 -1.5 -0.2 1.5 mT T/K B = 0 mT, IOUT1,2 = 0 mA B = 0 mT, IOUT1,2 = 0 mA without external Filter1) -50 mT < B < 50 mT -25 0 25 Bandwidth (-3 dB) Non-Linearity of Differential Output Non-Linearity of Single Ended Output Chopper Frequency over Temp. Peak-to-Peak AC Output Voltage Magnetic RMS Differential Broadband Noise Corner Frequency of 1/f Noise Corner Frequency of 1/f Noise Output Impedance 2-3 2-3 - - 10 0.5 - 2 kHz % 2, 3 - 2 - % 2, 3 2, 3 - - 147 0.6 - 1.3 kHz V T 2-3 - 10 - BW = 10 Hz to 10 kHz 2-3 - 10 - Hz B = 0 mT 2-3 - 100 - Hz B = 50 mT IOUT1,2 v 2.5 mA, TJ = 25 C, VDD = 6.8 V IOUT1,2 v 2.5 mA Fiberglass Substrate 30 mm x 10 mm x 1.5 mm pad size 2, 3 - 30 50 Output Impedance over Temperature Thermal Resistance Junction to Substrate Backside 2, 3 - 30 150 - 150 200 K/W with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV by limiting the bandwith 8 Micronas DATA SHEET HAL401 V 5 TA = 25 C VDD = 6.8 V V 0.05 B = 0 mT 0.04 VOFFS 0.03 TA = -40 C TA = 25 C TA = 125 C TA = 150 C VOUT1 VOUT2 4 VOUT1 3 VOUT2 0.02 0.01 0.00 2 -0.01 -0.02 1 -0.03 -0.04 0 -150 -100 -50 0 50 B 100 150 mT -0.05 2 4 6 8 10 12 VDD 14 V Fig. 3-3: Typical output voltages versus magnetic flux density Fig. 3-5: Typical differential output offset voltage versus supply voltage mT 2.0 B = 0 mT 1.5 BOFFS 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 TA = -40 C TA = 25 C TA = 125 C TA = 150 C mT 2.0 B = 0 mT 1.5 BOFFS 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 -50 -25 VDD = 4.8 V VDD = 6.0 V VDD = 12 V 2 4 6 8 10 12 VDD 14 V 0 25 50 75 100 125 150 C TA Fig. 3-4: Typical magnetic offset of differential output versus supply voltage Fig. 3-6: Typical magnetic offset of differential output versus ambient temperature Micronas 9 HAL401 DATA SHEET mV/mT 60 55 SB 50 45 40 35 30 25 20 15 B = 50 mT mV/mT 60 55 SB 50 45 40 35 30 25 20 15 -50 -25 B = 50 mT TA = -40 C TA = 25 C TA = 125 C TA = 150 C 2 4 6 8 10 12 VDD 14 V VDD = 4.8 V VDD = 6.0 V VDD = 12 V 0 25 50 75 100 125 150 C TA Fig. 3-7: Typical differential magnetic sensitivity versus supply voltage Fig. 3-9: Typical differential magnetic sensitivity versus ambient temperature % 1.5 TA = 25 C % 1.5 VDD = 6.8 V 1.0 NLdif 1.0 NLdif 0.5 0.5 0.0 0.0 -0.5 VDD = 4.8 V -1.0 VDD = 6.0 V VDD = 12 V -1.5 -80 -60 -40 -20 -0.5 TA = -40 C -1.0 TA = 25 C TA = 125 C TA = 150 C 0 20 40 B 60 80 mT -1.5 -80 -60 -40 -20 0 20 40 B 60 80 mT Fig. 3-8: Typical non-linearity of differential output versus magnetic flux density Fig. 3-10: Typical non-linearity of differential output versus magnetic flux density 10 Micronas DATA SHEET HAL401 % 3 TA = 25 C % 3 VDD = 6.0 V 2 NLsingle 2 NLsingle 1 1 0 0 -1 VDD = 4.8 V VDD = 12 V -2 -1 TA = -40 C -2 TA = 25 C TA = 125 C TA = 150 C -3 -80 -60 -40 -20 0 20 40 B 60 80 mT -3 -80 -60 -40 -20 0 20 40 B 60 80 mT Fig. 3-11: Typical single-ended non-linearity versus magnetic flux density Fig. 3-13: Typical non-linearity of singleended output versus magnetic flux density kHz 200 180 fCH 160 140 120 100 80 TA = -40 C 60 40 20 0 TA = 25 C TA = 125 C TA = 150 C fCH kHz 200 180 160 140 120 100 80 60 VDD = 4.8 V 40 20 0 -50 -25 VDD = 6.0 V VDD = 12 V 2 4 6 8 10 12 VDD 14 V 0 25 50 75 100 125 150 C TA Fig. 3-12: Typical chopper frequency versus supply voltage Fig. 3-14: Typical chopper frequency versus ambient temperature Micronas 11 HAL401 DATA SHEET V 2.4 V 2.25 2.24 2.2 VCM 2.0 VCM 2.23 2.22 2.21 2.20 1.6 TA = -40 C TA = 25 C TA = 150 C 2.17 2.16 1 2.15 -50 -25 75 100 125 150 C TA 2.19 2.18 VDD = 12 V 1.8 VDD = 4.8 V 1.4 1.2 2 4 6 8 10 12 VDD 14 V 0 25 50 Fig. 3-15: Typical common mode output voltage versus supply voltage Fig. 3-17: Typical common mode output voltage versus ambient temperature mV 1000 VOUT1pp, VOUT2pp TA = 25 C mV 1000 VOUT1pp, VOUT2pp 800 800 VDD = 4.8 V VDD = 6.0 V VDD = 12 V 600 600 400 400 200 200 0 2 4 6 8 10 12 VDD 14 V 0 -50 -25 0 25 50 75 100 125 150 C TA Fig. 3-16: Typical output AC voltage versus supply voltage Fig. 3-18: Typical output AC voltage versus ambient temperature 12 Micronas DATA SHEET HAL401 mA 25 IOUT1,2 = 0 mA 20 IDD 15 10 5 0 -5 TA = -40 C -10 -15 -20 -25 -15 TA = 25 C TA = 125 C TA = 150 C IDD mA 20 IOUT1,2 = 0 mA 15 10 5 TA = -40 C TA = 25 C TA = 125 C TA = 150 C -10 -5 0 5 10 VDD 15 V 0 2 3 4 5 6 VDD 7 8V Fig. 3-19: Typical supply current versus supply voltage Fig. 3-21: Typical supply current versus supply voltage mA 20 B = 0 mT mA 25 B = 0 mT IDD 15 IDD 20 15 10 10 VDD = 4.8 V 5 VDD = 4.8 V VDD = 6.0 V VDD = 12 V 0 -50 -25 0 25 50 75 100 125 150 C TA 0 -6 -4 -2 0 2 4 IOUT1,2 6 mA 5 VDD = 12 V Fig. 3-20: Typical supply current versus temperature Fig. 3-22: Typical supply current versus output current Micronas 13 HAL401 DATA SHEET dBT rms 200 B = 0 mT 180 VDD = 4.8 V ROUT 160 140 120 100 80 60 40 20 0 -50 -25 75 100 125 150 C TA -140 83 nT Hz 0 25 50 -150 0.1 1.0 10.0 100.0 1k 10000.0 1000000.0 0.1 1 10 100 1000.0 100000.0 Hz 10k 100k 1M f -130 VDD = 6.0 V VDD = 12 V -120 nmeff -110 B = 0 mT B = 65 mT Hz -100 TA = 25 C Fig. 3-23: Typical dynamic differential output resistance versus temperature Fig. 3-25: Typical magnetic noise spectrum dB 20 TA = 25 C 0 dB = 42.5 mV/mT sB 10 0 -10 -20 -30 -40 10 10 100 100 1000 1k 10000 10 k fB 100000 100 k Fig. 3-24: Typical magnetic frequency response 14 Micronas DATA SHEET HAL401 4.3. Application Circuit The normal integrating characteristics of a voltmeter is sufficient for signal filtering. VDD 4.7n 1 VDD HAL 401 OUT1 2 1k OUT2 3 1k 330 p GND 4 Do not connect OUT1 or OUT2 to Ground. 4. Application Notes Mechanical stress on the device surface (caused by the package of the sensor module or overmolding) can influence the sensor performance. The parameter VOUTACpp (see Fig. 2-2) increases with external mechanical stress. This can cause linearity errors at the limits of the recommended operation conditions. 330 p 47 n Oscilloscope Ch1 3.3 k 6.8 n 3.3 k 47 n WARNING: DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS! Ch2 4.1. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * RthJSB For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. 4.2. EMC and ESD Please contact Micronas for detailed information on EMC and ESD results. Fig. 4-1: Filtering of output signals Display the difference between channel 1 and channel 2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF for electromagnetic immunity are recommended. VDD 1 VDD HAL 401 OUT1 2 Voltage Meter High OUT2 3 Low GND 4 Do not connect OUT1 or OUT2 to Ground. Fig. 4-2: Flux density measurement with voltmeter Micronas 15 HAL401 VCC 330 p R+R 0.75 R 2 1.5 R - R 330 p GND 4 R-R 3C CMOS OPV + 0.22 R ADC 1.33 C DATA SHEET VDD 4.7n 1 VDD HAL 401 OUT1 OUT2 3 4.4 C Do not connect OUT1 or OUT2 to Ground. Fig. 4-3: Differential HAL 401 output to single-ended output R = 10 k, C = 7.5 nF, R for offset adjustment, BW-3dB = 1.3 kHz VDD 2.2 n 4.7 n 1 VDD HAL 401 OUT1 2 4.7 k OUT2 3 4.7 k 330 p GND 4 Do not connect OUT1 or OUT2 to Ground. VCCy6 V 330 p 4.7 k - CMOS OPV + 4.7 k 4.7 n 4.7 k - 4.7 k 3.0 k 8.2 n CMOS OPV + OUT 1n VEEx*6 V Fig. 4-4: Differential HAL 401 output to single-ended output (referenced to ground), filter - BW-3dB = 14.7 kHz 16 Micronas DATA SHEET HAL401 Micronas 17 HAL401 5. Data Sheet History 1. Final Data Sheet: "HAL 401 Linear Hall Effect Sensor IC", June 26, 2002, 6251-470-1DS. First release of the final data sheet. 2. Final Data Sheet: "HAL 401 Linear Hall Effect Sensor IC", Sept. 14, 2004, 6251-470-2DS. Second release of the final data sheet. Major changes: - new package diagram for SOT89-1 DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-470-2DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 18 Micronas |
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