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| GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications * * * Enhancement-mode High speed: tf = 0.30 s (Typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (Typ.) (IC = 60 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating 400 25 40 100 100 150 -55~150 W C C Unit V V A Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth(j-c) 15 V 0 -15 V Test Condition VGE = 25 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz 3.33 39 Min 3.0 Typ. 1.8 3900 0.33 0.43 0.30 0.54 Max 500 1.0 6.0 2.5 Unit nA mA V V pF 0.40 s 200 V 1.25 C/W 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-06-07 1/4 GT40G121 IC - VCE 100 20 10 80 9 10 8 VCE - VGE Common emitter Collector-emitter voltage VCE (V) Tc = -40C 8 Collector current IC (A) 15 60 VGE = 7 V 40 6 4 80 60 30 20 Common emitter Tc = 25C 0 0 1 2 3 4 5 2 IC = 10 A 0 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter Collector-emitter voltage VCE (V) Tc = 25C 8 Collector-emitter voltage VCE (V) Tc = 125C 8 6 6 4 80 60 30 4 80 60 30 2 IC = 10 A 0 0 4 8 12 16 20 24 2 IC = 10 A 0 0 4 8 12 16 20 24 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 4 Common emitter VCE (sat) - Tc Gate-emitter saturation voltage VCE (sat) (V) VCE = 5 V 80 VGE = 15 V 3 Collector current IC (A) 60 80 2 60 30 1 IC = 10 A 40 25 20 Tc = 125C -40 0 0 2 4 6 8 10 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 2000-06-07 2/4 GT40G121 VCE, VGE - QG 20 Common emitter 10000 5000 3000 C - VCE cies Common emitter VGE = 0 V f = 1 MHz Tc = 25C Collector-emitter voltage VCE (x25 V) Gate-emitter voltage VGE (V) (pF) Collector current C 1000 500 300 Coes 100 50 30 Cres 10 100 150 16 RL = 3.3 Tc = 25C 12 VCE = 200 V 8 4 0 0 40 80 120 160 200 1 3 10 30 100 300 1000 3000 Collector-emitter voltage VCE Gate charge QG (nC) (V) Switching time - RG 5 Common emitter 3 VCC = 200 V VGG = 15 V IC = 60 A Tc = 25C 1 toff 0.5 0.3 ton tr tf 100 300 Safe operating area IC max (pulse) IC max (continuous) 1 ms* DC operation 10 5 *Single non-repetitive 3 pulse Tc = 25C Curves must be 1 derated linearly with increase in 0.5 temperature. 0.3 1 3 10 s* 100 s* Switching time (s) (A) Collector current IC 50 30 10 ms* (pulse) 0.1 3 5 10 30 50 100 300 Gate resistance RG () 10 30 100 300 1000 Collector-emitter voltage VCE (V) Switching time 1 - IC 0.5 Switching time (s) 0.3 toff ton tr tf 0.1 0.05 0.03 Common emitter VCC = 200 V VGG = 15 V RG = 39 Tc = 25C 0 10 20 30 40 50 60 70 0.01 Collector current IC (A) 2000-06-07 3/4 GT40G121 Reverse bias safe operating area Transient thermal impedance rth (t) (C/W) 300 10 2 Tc = 25C rth (t) - tw 100 10 1 (A) 50 30 Collector current IC 10 0 10 5 3 Tj < 125C = VGE = 15 V RG = 39 1 1 3 10 30 100 300 1000 10 -1 10 -2 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Collector-emitter voltage VCE (V) Pulse Width tw (s) 2000-06-07 4/4 |
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