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SSM3K09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
* * Small package Low on resistance : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V)
Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25C) Channel temperature Storage temperature Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 30 20 400 800 150 150 -55~150 mW C C Unit V V mA
Note1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm x 3)
Figure 1.
Marking
3
Equivalent Circuit
(top view)
3
Figure 1: 25.4 mm x 25.4 mm x 1.6 t,
Cu Pad: 0.6 mm2 x 3
0.6 mm 1.0 mm
DJ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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SSM3K09FU
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 200 mA ID = 200 mA, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDD = 5 V, ID = 200 mA, VGS = 0~4 V (Note2) (Note2) (Note2) (Note2) Min 30 1.1 270 Typ. 0.5 0.8 1.0 20 7 16 72 68 Max 1 1 1.8 0.7 1.2 1.7 pF pF pF ns ns Unit A V A V mS
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
Output Input 50 RL 10% 0V
(b) VIN
4V 90%
4V
0 10 s
VDD
(c) VOUT
VDD
10%
VDD = 5 V D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C
VDS (ON)
90% tr ton toff tf
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4.0 V or higher to turn on this product.
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SSM3K09FU
ID - VDS
1000 Common Source 10 800 4 Ta = 25C 3.3 600 3.0 400 2.8 2.6 200 VGS = 2.4 V 0 0 0.5 1 1.5 2 2 1.8
RDS (ON) - ID
Common Source Ta = 25C
Drain-Source on resistance RDS (ON) ()
1.6 1.4 1.2 1 4V 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 10 V VGS = 3.3 V
Drain current ID
(mA)
Drain-Source voltage VDS
(V)
Drain current ID
(mA)
ID - VGS
1000 Common Source VDS = 5 V 100 2 1.8
RDS (ON) - VGS
Common Source ID = 200 mA
Drain-Source on resistance RDS (ON) ()
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -25C 25C Ta = 100C
(mA)
25C 10 Ta = 100C 1 -25C
Drain current ID
0.1
0.01 0
1
2
3
4
0 0
2
4
6
8
10
Gate-Source voltage VGS
(V)
Gate-Source voltage VGS
(V)
Yfs - ID RDS (ON) - Ta
2 1.8 Common Source 500 ID = 200 mA 1000 Common Source VDS = 5 V Ta = 25C
Forward transfer admittance Yfs (mS)
75 100 125 150
Drain-Source on resistance RDS (ON) ()
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 10 V VGS = 3.3 V 4V
300
100
50 30
10 10
30
50
100
300
500
1000
Ambient temperature Ta (C)
Drain current ID
(mA)
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SSM3K09FU
Vth - Ta
2 1000 Common Source 1.8
IDR - VDS
Common Source VGS = 0 Ta = 25C D 600 G S 400 IDR
Gate threshold voltage Vth (V)
(mA) Drain Reveres current IDR
ID = 0.1 mA
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150
800
200
0 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Ambient temperature Ta (C)
Drain-Source voltage VDS
(V)
C - VDS
100 1000 Common Source VGS = 0 V f = 1 MHz Ta = 25C Ciss 10 Coss
t - ID
Common Source VDD = 5 V VGS = 0~4 V Ta = 25C
Switching time t (ns)
(pF)
toff tf 100 ton tr
Capacitance C
Crss 1 0.1
1
10
100
10 1
10
100
1000
Drain-Source voltage VDS
(V)
Drain current ID
(mA)
PD - Ta
200 Mounted on FR4 board (25.4 mm x 25.4 mm x1.6 t 2 Cu pad: 0.6 mm x 3) Figure 1 150
Power dissipation PD
(mW)
100
50
0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (C)
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