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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWINGS (Unit : mm) TO-251 FEATURES 1.60.2 1 2 3 RDS(on)3 = 19.0 m (MAX.) (VGS = 4.0 V, ID = 15 A) * Low Ciss : Ciss = 2290 pF (TYP.) * Built-in Gate protection diode 1.10.2 7.0 MAX. RDS(on)2 = 16.5 m (MAX.) (VGS = 4.5 V, ID = 15 A) 0.5-0.1 2.3 2.3 0.75 +0.2 13.7 MIN. RDS(on)1 = 12.5 m (MAX.) (VGS = 10 V, ID = 15 A) 5.50.2 * Low On-Resistance 5.00.2 4 1.5-0.1 +0.2 6.50.2 2.30.2 0.50.1 0.5-0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) +0.2 ORDERING INFORMATION PART NUMBER 2SK2982 2SK2982-Z PACKAGE TO-251 TO-252 0.8 4.3 MAX. 6.50.2 5.00.2 4 TO-252 1.5-0.1 +0.2 2.30.2 0.50.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note 1 2 3 2.0 MIN. 5.50.2 10.0 MAX. VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 20 30 120 1.0 30 150 -55 to + 150 V V A A W W C C 1.10.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) Total Power Dissipation (TA = 25C) Total Power Dissipation (TCH = 25C) Channel Temperature Storage Temperature Note PW 10 s, Duty cycle 1 % EQUIVALENT CIRCUIT Drain (D) Gate (G) Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source (S) The information in this document is subject to change without notice. Document No. D12354EJ1V0DS00 (1st edition) Date Published December 1998 NS CP(K) Printed in Japan (c) 0.5 1.0 MIN. 1.5 TYP. 1998 2SK2982 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss Td(on) tr td(off) Tf QG QGS QGD VF(S-D) Trr Qrr TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15 A VGS = 4.0 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 30 A VDD = 24 V VGS = 10 V IF = 30 A, VGS = 0 If = 30A, VGS = 0 di/dt = 100A/s 2290 940 440 40 427 174 226 53 6.3 16 0.8 49 50 1.0 8 MIN. TYP. 9.8 13.2 15.0 1.5 21 10 10 MAX. 12.5 16.5 19.0 2.0 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V Ns nC TEST CIRCUIT 1 SWITCHING TIME D.U.T. RL VGS VGS Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = 2 mA PG. 90 % 90 % ID PG. RG RG = 10 0 ID 10 % VGS (on) 90 % RL VDD VDD 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf 2 2SK2982 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A ID(pulse) 100 d ite ) im 0 V )L on =1 S( RD VGS t (a 50 ID(DC) 10 Po 1 0 s m s 10 we 10 rD m 0 s 100 VGS =10 V VGS = 4.5 V m iss ip DC atio s n Lim 1 0.1 TC = 25C Single Pulse ite 40 d VGS = 4.0 V 1 10 100 0 0.5 1.0 1.5 2.0 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Tch = -25C 25C 125C 100 Pulsed ID - Drain Current - A 10 1 VDS = 10 V 0 2 4 6 8 VGS - Gate to Source Voltage - V 3 2SK2982 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 125 C/W 100 10 Rth(ch-c) = 4.17 C/W 1 0.1 0.01 0.001 Single Pulse TC = 25C 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed Tch = -25C 25C 75C 125C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 100 20 ID = 15 A 10 10 1 1 10 100 1000 0 5 10 15 ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA 30 Pulsed VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = 4.0 V 10 VGS = 4.5 V VGS =10 V 1.5 1.0 0.5 0 0 - 50 0 50 100 150 Tch - Channel Temperature - C 1 10 ID - Drain Current - A 100 4 2SK2982 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100 VGS = 0 V 10 20 VGS = 4.0 V VGS = 4.5 V 15 VGS = 10 V 10 1 5 ID = 15 A - 50 0 50 100 150 0.1 0 Tch - Channel Temperature - C 0 1.5 1.0 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 tr tf td(off) 100 td(on) VGS = 0 V f = 1 MHz Ciss 1000 Coss Crss 100 10 VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A 10 0.1 1 10 100 1 0.1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V 30 VDD = 24 V 15 V 6V 100 VGS 12 10 8 6 20 10 10 VDS 0 20 40 60 80 4 2 0 1 0.1 1 10 100 IF - Drain Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 30 A 14 5 2SK2982 [MEMO] 6 2SK2982 [MEMO] 7 2SK2982 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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