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| CNY75(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage 300 V D For application class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor-system interface, line receiver. These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler providing protective separation D VDE 0805/IEC 950/ 60950 Office machines (applied for reinforced isolation for mains voltages 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D VDE 0860/IEC 65 Safety for mains-operated electronic and related household apparatus TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 1 (14) CNY75(G) Series Features According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File No: E 76222 D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D D D D CTR offered in 3 groups Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Therefore extra low coupling capacity typical 0.3 pF, high Common Mode Rejection D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Special construction: D Low temperature coefficient of CTR D Thickness through insulation 0.75 mm Order Schematic Part Numbers CNY75A/ CNY75(G)A/ CNY75(G)AS CNY75B/ CNY75(G)B/ CNY75(G)BS CNY75C/ CNY75(G)C/ CNY75(G)CS Suffix: G = Leadform 10.16 mm S = Waterproof device CTR-Ranking 63 to 125% 100 to 200% 160 to 320% Remarks A waterproof construction is recommended for couplers where a pure water cleaning process is used insteal of a standard-soldering/ cleaning process. In this case please order the part numbers with the suffix "S". The waterproof construction corresponds with the coupling system "S", and does not belong to the part number itself. Standard parts are marked with the letter "A". This coupling system indicator "A" or "S" is in a separate (second) line of the marking. Pin Connection B 6 C 5 E 4 1 A (+) 2 C (-) 3 n.c. 2 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 95 10805 CNY75(G) Series Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM Ptot Tj Value 5 60 3 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCBO VCEO VECO IC ICM Ptot Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameters AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mW C C C 2 mm from case, t 10 s TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 3 (14) CNY75(G) Series Maximum Safety Ratings1) (according to VDE 0884) Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature 1) Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Derating Diagram 275 250 225 200 175 150 125 100 75 50 25 0 0 95 10923 Psi (mW) Isi (mA) 25 50 75 100 125 150 175 Tamb ( C ) 4 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 CNY75(G) Series Electrical Characteristics Tamb = 25C Input (Emitter) Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Symbol VF V(BR) Cj Min. 5 50 Typ. 1.25 Max. 1.6 Unit V V pF Output (Detector) Parameters Collector base breakdown voltage Collector emitter breakdown voltage Emitter collector breakdown voltage Collector emitter cut-off current Test Conditions IC = 100 mA IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0 Symbol V(BR)CBO V(BR)CEO V(BR)ECO ICEO Min. 90 90 7 150 Typ. Max. Unit V V V nA Coupler Parameters AC isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Test Conditions f = 50 Hz, t = 1 s IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 10 mA Type Symbol VIO VCEsat Min. 3.75 Typ. Max. Unit kV V 0.3 fc Ck CTR CTR CTR CTR CTR CTR 110 0.3 0.15 0.3 0.6 0.63 1 1.6 kHz pF Coupling capacitance IC/IF IC/IF CNY75A CNY75B CNY75C CNY75A CNY75B CNY75C 1.25 2 3.2 TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 5 (14) CNY75(G) Series Switching Characteristics (Typical Values) VS = 5 V Type CNY75A CNY75(G)A CNY75(G)AS CNY75B CNY75(G)B CNY75(G)BS CNY75C CNY75(G)C CNY75(G)CS 0 R G = 50 W tp T = 0.01 td[ms] 2.0 tr[ms] 2.5 RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 4.5 0.3 2.7 3.0 10 10.0 25.0 10 2.5 3.0 5.5 0.3 3.7 4.0 10 16.5 20.0 10 2.8 4.2 7.0 0.3 4.7 5.0 10 11 37.5 10 IF IF +5V I C = 10 mA ; Adjusted through input amplitude t p = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL w 1 MW v 20 pF 95 10891 Figure 1. Test circuit, non-saturated operation IF 0 R G = 50 W tp T = 0.01 IF +5V IC t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL w 1 MW v 20 pF 95 10897 Figure 2. Test circuit, saturated operation 6 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 CNY75(G) Series Insulation Rated Parameters (according to VDE 0884) Parameters Routine test Lot test Partial discharge (sample test) test voltage Test Conditions 100%, ttest = 1 s tTr = 10 s, ttest = 60 s (see figure 3) VIO = 500 V VIO = 500 V, Tamb 100C VIO = 500 V, Tamb 150C (construction test only) Symbol Vpd VIOPTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W Insulation resistance VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s Vpd VIOWM VIORM 0 t3 t1 94 9225 ttest = 60 s tstress = 62 s t4 t t2 tTr =10 s Figure 3. Test pulse diagram for sample test according to DIN VDE 0884 TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 7 (14) CNY75(G) Series Typical Characteristics (Tamb = 25C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=30V IF=0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11038 25 50 75 100 96 11700 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 7. Collector Dark Current vs. Ambient Temperature 1 I CB - Collector Base Current ( mA ) VCB=5V 0.1 I F - Forward Current ( mA ) 100.0 10.0 0.01 1.0 0.1 0 96 11862 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11039 1 10 IF - Forward Current ( mA ) 100 Figure 5. Forward Current vs. Forward Voltage 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C ) Figure 8. Collector Base Current vs. Forward Current 100 IC - Collector Current ( mA ) CTR rel - Relative Current Transfer Ratio VCE=5V IF=10mA VCE=5V 10 1 0.1 0.01 0.1 95 11040 1 10 100 96 11918 IF - Forward Current ( mA ) Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Forward Current 8 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 CNY75(G) Series Typical Characteristics (Tamb = 25C, unless otherwise specified) 100 IF=50mA IC - Collector Current ( mA ) 20mA 10 10mA 5mA 1 2mA 1mA CNY75A 0.1 0.1 95 11041 V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% 0.8 CNY75A 0.6 0.4 20% 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 1 10 100 VCE - Collector Emitter Voltage ( V ) 95 11034 Figure 10. Collector Current vs. Collector Emitter Voltage 100 IF=50mA IC - Collector Current ( mA ) 20mA 10 10mA 5mA 2mA 1mA 0.1 0.1 95 11042 Figure 13. Collector Emitter Sat. Voltage vs. Collector Current V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% 0.8 CNY75B 0.6 20% 1 0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100 10% CNY75B 1 10 100 VCE - Collector Emitter Voltage ( V ) 95 11043 Figure 11. Collector Current vs. Collector Emitter Voltage 100.0 IF=50mA IC - Collector Current ( mA ) 20mA 10mA 10.0 5mA 2mA 1.0 1mA CNY75C 0.1 0.1 96 11919 Figure 14. Collector Emitter Sat. Voltage vs. Collector Current V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% 0.8 CNY75C 0.6 0.4 0.2 20% 10% 0 1 10 IC - Collector Current ( mA ) 100 1.0 10.0 100.0 VCE - Collector Emitter Voltage ( V ) 95 11044 Figure 12. Collector Current vs. Collector Emitter Voltage Figure 15. Collector Emitter Sat. Voltage vs. Collector Current TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 9 (14) CNY75(G) Series Typical Characteristics (Tamb = 25C, unless otherwise specified) 1000 CTR - Current Transfer Ratio ( % ) VCE=5V hFE - DC Current Gain 800 1000 CNY75C(G) VCE=5V 100 600 400 200 0 0.01 10 1 0.1 1 10 100 95 11046 0.1 1 10 100 95 11035 IC - Collector Current ( mA ) IF - Forward Current ( mA ) Figure 16. DC Current Gain vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) CNY75A(G) VCE=5V 100 Figure 19. Current Transfer Ratio vs. Forward Current 50 CNY75A(G) Saturated Operation VS=5V RL=1kW toff 20 10 0 t on / t off - Turn on / Turn off Time ( m s ) 40 30 10 ton 20 1 0.1 95 11036 1 10 100 95 11033 0 5 10 15 IF - Forward Current ( mA ) IF - Forward Current ( mA ) Figure 17. Current Transfer Ratio vs. Forward Current 1000 CTR - Current Transfer Ratio ( % ) CNY75B(G) VCE=5V 100 Figure 20. Turn on / off Time vs. Forward Current 50 CNY75B(G) Saturated Operation VS=5V RL=1kW toff 20 10 ton 0 0 95 11048 t on / t off - Turn on / Turn off Time ( m s ) 100 40 30 10 1 0.1 95 11045 1 10 5 10 15 20 IF - Forward Current ( mA ) IF - Forward Current ( mA ) Figure 18. Current Transfer Ratio vs. Forward Current Figure 21. Turn on / off Time vs. Forward Current 10 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 CNY75(G) Series Typical Characteristics (Tamb = 25C, unless otherwise specified) t on / t off - Turn on / Turn off Time ( m s ) CNY75C(G) Saturated Operation VS=5V RL=1kW toff t on / t off - Turn on / Turn off Time ( m s ) 50 20 CNY75B(G) Non Saturated Operation VS=5V RL=100W 40 15 30 10 ton 5 toff 0 20 10 ton 0 0 5 10 15 20 0 95 11047 2 4 6 8 10 95 11050 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 22. Turn on / off Time vs. Forward Current 20 CNY75A(G) Non Saturated Operation VS=5V RL=100W Figure 24. Turn on / off Time vs. Collector Current 20 CNY75C(G) Non Saturated Operation VS=5V RL=100W t on / t off - Turn on / Turn off Time ( m s ) 15 ton 10 toff 5 t on / t off - Turn on / Turn off Time ( m s ) 15 ton 10 toff 5 0 0 95 11032 0 2 4 6 8 10 95 11049 0 2 4 6 8 10 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 23. Turn on / off Time vs. Collector Current Figure 25. Turn on / off Time vs. Collector Current TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 11 (14) CNY75(G) Series Dimensions in mm Leadform 10.16. mm (G-type) 8.6 8.4 7.82 7.42 4.6 4.2 7.7 2.5 2.55 2.45 4.3 4.1 2.54 0.35 0.25 0.58 0.48 10.36 9.96 1.54 6 5 4 6.4 6.2 1 2 3 0.65 5.08 8.8 8.4 technical drawings according to DIN specifications 95 10932 12 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 CNY75(G) Series Dimensions in mm 8.6 8.4 7.82 7.42 4.9 4.5 2.55 2.45 4.3 4.1 3.3 0.35 0.25 2.54 0.58 0.48 9.6 8.4 1.54 6 5 4 6.4 6.2 1 2 3 0.65 5.08 8.8 8.4 technical drawings according to DIN specifications 95 10931 TELEFUNKEN Semiconductors Rev. A1, 04-Jun-96 13 (14) CNY75(G) Series Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 14 (14) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 |
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