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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYV42E series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr IRRM PARAMETER BYV42ERepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode MAX. 100 100 0.85 30 28 0.2 MAX. 150 150 0.85 30 28 0.2 MAX. 200 200 0.85 30 28 0.2 UNIT V V A ns A
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
a2
k
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave = 0.5; Tmb 108 C sinusoidal a = 1.57; Tmb 111 C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 30 27 43 30 150 160 112 0.2 0.2 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s A A C C
IO(RMS) IFRM IFSM
I2t IRRM IRSM Tstg Tj
t = 25 s; = 0.5; Tmb 108 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature
1 Tmb 144C for thermal stability. 2 Neglecting switching and reverse current losses. For output currents in excess of 20 A, connection should be made to the exposed metal mounting base. October 1994 1 Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. -
BYV42E series
MAX. 8
UNIT kV
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. TYP. 60 MAX. 2.4 1.4 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 15 A; Tj = 150C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.78 0.95 1.00 0.5 10 MAX. 0.85 1.05 1.20 1 100 UNIT V V V mA A
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL Qs trr1 trr2 Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Reverse recovery time (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 6 20 13 1 MAX. 15 28 22 UNIT nC ns ns V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV42E series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
20
PF / W
Vo = 0.705 V Rs = 0.0097 Ohms
BYV42
Tmb(max) / C D = 1.0 0.5
102
15
114
time V F
10
0.1
0.2 126
5
I
tp
D=
V V F time
tp T t
138
fr
T
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.705 V Rs = 0.0097 Ohms
R
15
BYV42
Tmb(max) / C 114 a = 1.57 1.9 2.2
D.U.T. Voltage Pulse Source
10 4
2.8
126
Current shunt
5
138
to 'scope
0 0 5 10 150 15
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV42E series
trr / ns 1000
100 Qs / nC IF=20A 10A 5A 2A 1A 10
IF=20A 100 IF=1A 10
1
1
10 dIF/dt (A/us)
100
1.0 1.0 10 -dIF/dt (A/us) 100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Zth (K/W)
IF=20A 1 IF=1A
1
0.1
0.1
P
D
tp
t
0.01 1 10 -dIF/dt (A/us) 100
0.01 10 us
1 ms tp / s
0.1
10 s
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp).
50
IF / A Tj = 150 C
40
Tj = 25 C
30
20 typ 10 max 0 0 0.5 VF / V 1.0 1.5
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV42E series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.12. TO220AB; pin 2 connected to mounting base.
Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV42E series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1994
6
Rev 1.100

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