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| Preliminary data BSO307N SIPMOS (R) Small-Signal Transistor * Dual N-channel * Enhancement mode * Logic Level * Avalanche rated * VGS(th) = 1.2 ...2.0 V Type BSO307N VDS 30 V ID 4.2 A RDS(on) 0.075 Package Marking P-DSO-8 Ordering Code Q. . . . - . . . . Electrical Characteristics, at Tj = 25C, unless otherwise specified Maximum Ratings Parameter Continuous drain current, one channel active Symbol Values 4.2 Unit A ID IDpuls 16.8 TA = 25 C Pulsed drain current, one channel active TA = 25 C Avalanche energy, single pulse EAS - mJ ID = 4.2 A, VDD = 25 V, RGS = 25 L = 6.23 mH, Tj = 25 C Avalanche current, repetitive,limited by Tj(max) Avalanche energy, periodic limited by Tj(max) Reverse diode dv/dt IAR EAR dv/dt 4.2 - A mJ KV/s IS = 4.2 A, VDS = 20 V, di/dt = 200 A/s Tjmax = 150 C Gate source voltage Power dissipation, one channel avtive - VGS Ptot 14 2 V W TA = 25 C Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C 1 31/10/1997 Preliminary data BSO307N Thermal Characteristics Parameter Symbol min. Thermal resistance, junction-soldering point 1)2) Thermal resistance, chip to ambient 1)2) Values typ. 30 62.5 max. K/W Unit RthJS RthJA - 1) Device on 50mm * 50mm *1.5mm epoxy PCB FR4 with 6 cm2 copper area around the heat slug footprint(one layer, 70 m copper). PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 30 1.6 0.1 10 10 0.055 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 20 A Zero gate voltage drain current IDSS 1 100 A VDS = 30 V, VGS = 0 V, Tj = 25 C VDS = 30 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.075 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 4.2 A Semiconductor Group 2 31/10/1997 Preliminary data BSO307N Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 3 6 400 160 70 - S pF 500 200 90 ns 22 33 VDS 2 * ID * RDS(on)max, ID = 4.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 15 V, VGS = 4.5 V, ID = 4.2 A RG = 16 Rise time tr 22 33 VDD = 15 V, VGS = 4.5 V, ID = 4.2 A RG = 16 Turn-off delay time td(off) 22 33 VDD = 15 V, VGS = 4.5 V, ID = 4.2 A RG = 16 Fall time tf 25 0.4 8 13 3.2 38 nC 0.6 12 20 V - VDD = 15 V, VGS = 4.5 V, ID = 4.2 A RG = 16 Gate charge at threshold Qg(th) Qg(5) - VDD = 15 V, ID 0.1 A, VGS 0 to 1 V Gate Charge at 5.0 V VDD = 15 V, ID = 4.2 A, VGS 0 to 5 V Gate Charge total Qg(total) - VDD = 15 V, ID = 4.2 A, VGS 0 to 10 V Gate plateau voltage V(plateau) VDS = 15 V, ID = 4.2 A Semiconductor Group 3 31/10/1997 Preliminary data BSO307N Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current IS A 0.85 25 20 4.2 16.8 V 1.1 ns 38 nC 30 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 8.4 A Reverse recovery time VR = 15 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 31/10/1997 Preliminary data BSO307N Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 4 V 4.5 A 2.0 W Ptot 1.6 1.4 ID 3.5 3.0 1.2 2.5 1.0 2.0 0.8 1.5 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 1.0 0.5 0.0 0 20 40 60 80 100 120 C 160 TA TA Semiconductor Group 5 31/10/1997 Preliminary data BSO307N Typ. output characteristics ID = (VDS) parameter: tp = 80 s 10 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.24 Ptot = 2W k l j i g h f e VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 0.20 RDS (on) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 a b ID 8 7 6 5 4 3 2 1 c c dd e f g h i j k l c d i ge h jf VGS [V] = 0.02 V 5.0 0.00 0.0 a 3.0 2.5 2.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 2.0 3.0 4.0 5.0 6.0 A 7.5 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 24 A 20 ID 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 31/10/1997 Preliminary data BSO307N Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 4.2 A, VGS = 4.5 V 0.19 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 20 A 4.6 V 4.0 0.16 RDS (on) 0.14 VGS(th) 3.6 3.2 0.12 0.10 0.08 2.8 98% 2.4 98% 2.0 typ 0.06 0.04 0.8 0.02 0.00 -60 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 1.6 typ 2% 1.2 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C Ciss pF IF 10 1 Coss 10 2 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 10 -1 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 31/10/1997 Preliminary data BSO307N Drain-source breakdown voltage V(BR)DSS = (Tj) Typ. gate charge VGS = (QGate) parameter: ID puls = 4 A 16 36 V V V(BR)DSS 34 33 VGS 12 10 32 8 31 6 30 4 29 28 27 -60 2 0 0 0,2 VDS max 0,8 VDS max -20 20 60 100 C 160 2 4 6 8 10 12 14 nC 18 Tj QGate Semiconductor Group 8 31/10/1997 |
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