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| BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45 A FULL R L FEATURES: * PG = 11.5 dB min. at 175 W/30 MHz * IMD3 = -30 dBc max. at 175 W(PEP) * OmnigoldTM Metalization System C B E C O.125 NOM. B D G F E E H MAXIMUM RATINGS IC VCESM VCEO VEBO PDISS TJ TSTG JC 15 A 65 V 33 V 4.0 V 230 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.76 C/W DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE VCE(SAT) CC GP IMD3 C IC = 50 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IE = 20 mA VCE = 33 V VCE = 5.0 V IC = 25 A VCB = 28 V IC = 10 A IB = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 33 4.0 20 15 50 2.4 380 11.5 UNITS V V V mA --V pF dB dBc % VCE = 28 V ICQ = 100 mA POUT = 175 W (PEP) 40 -30 IMPEDANCE DATA FREQ. 470 MHz ZIN() 1.5 - j2.7 ZCL() 5.7 + j1.5 PIN(W) 2.0 VCE(V) 12.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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