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| Datasheet File OCR Text: |
| BFQ34 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BFQ34 is primarily designed for driver and final stages in MATV system amplifier up to 4.0 GHz. PACKAGE STYLE .280 4L STUD A 45 FEATURES: * PG = 12 dB min. at 3 W/ 400 MHz * C = 50% min. at 3W/ 400 MHz * OmnigoldTM Metallization System * Diffused Emitter-Ballasting resistors B C E B D C J E F I E MAXIMUM RATINGS IC VCBO VCEO PDISS TJ TSTG JC 150 mA 25 V 18 V 2.7 W @ TC = 160 C -65 C to +200 C -65 C to +150 C 15 K/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE Cc GUM F IC = 20 mA TC = 25 C TEST CONDITIONS IC = 5.0 mA IE = 5.0 mA VCB = 15 V VCE = 15 V VCE = 15 V VCB = 15 V VCE = 15 V IC = 120 mA IC = 75 mA IC = 150 mA f = 1.0 MHz f = 500 MHz MINIMUM TYPICAL MAXIMUM 18 25 2.0 100 25 25 70 70 2.0 16.3 8.0 2.75 UNITS V V V A --pF dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are Subject to change without notic. REV. A 1/1 |
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