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| AJT015 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. PACKAGE STYLE .310 2L FLG 4x .062 x 45 2xB D G H I J K L R N DIM A B C D E F G H I J K L M N P R .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 MINIMUM inches / mm A .040 x 45 C OE F FEATURES: * Internal Input/Output Matching Network * PG = 8.1 dB at 15 W/ 1215 MHz * OmnigoldTM Metalization System * 28 V Operations M P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC 1.8 A 32 V 50 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 3.0 C/W .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10545 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 10 mA IC = 10 mA IE = 1 mA VCE = 28 V VCE = 5.0 V VCC = 28 V PIN = 2.3 W TC = 25 C NONETEST CONDITIONS RBE = 10 VBE = 0 V IC = 500 mA POUT = 15 W f = 960 - 1215 MHz MINIMUM TYPICAL MAXIMUM 55 55 3.5 2.0 15 8.1 40 150 UNITS V V V mA --dB % Pulse format: 6.4 sec on 6.6 sec off, repeat for 3.3 sec. Then off for 4.525 sec Duty Cycle: Burst 49.2%, overall 20.8% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 1/2 ERROR! REFERENCE SOURCE NOT FOUND. AJT015 IMPEDANCE DATA: FREQ 960 1090 1215 PIN = 2.3 W VCC = 28 V ZIN() 5.7 + j4.3 5.8 + j2.5 5.0 + j3.0 ZCL() 5.7 - j7.7 4.3 - j6.5 4.0 - j4.8 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 2/2 |
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