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TDA7253L 6W AMPLIFIER WITH MUTING PRODUCT PREVIEW s s s s s WIDE SUPPLY VOLTAGE RANGE 6W @ VS = 20V, R L = 8, THD=10% MUTE FACILITY (POP FREE) WITH LOW CONSUMPTION AC SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION (150C SIP10 ORDERING NUMBER: TDA7253L DESCRIPTION The TDA7253L is class AB audio power amplifier assembled in the Single in Line 10 pins Package. TEST AND APPLICATION CIRCUIT R7 820 = MUTE SW CSVR 100F 3 +VS C4 0.1F 9 C5 470F C2 IN (L) TDA7253L 5 7 R3 1.5K R4 47 C11 1000F 100nF 27K 4 6 CF C9 0.1F R6 4.7 RL 47F D02AU1429 June 2003 1/7 TDA7253L ABSOLUTE MAXIMUM RATINGS Symbol VS IO IO Ptot Top Tstg,Tj Supply Voltage Output Peak Current (repetitive f >20Hz) Output Peak Current (non repetitive, t = 100s) Total Power Dissipation (Tcase = 70C) Operating Temperature Range Storage & Junction Temperature Parameter Value 30 1.7 2 8 0 to 70 -40 to 150 Unit V A A W C C THERMAL DATA Symbol Rth j-case Parameter Thermal resistance junction to case Max Value 9 Unit C/W PIN CONNECTION (Top view) 10 9 8 7 6 5 4 3 2 1 N.C. +VS N.C. OUTPUT GND NON INVERTING INPUT INVERTING INPUT SVR/MUTING N.C. N.C. D02AU1430 Figure 1. Block Diagram CFCOUP1 RFI 27K ININ+ 4 5 + 7 RF1 SVR 3 MUTE SC PROTECTION RF2 REFERENCES Tj L OUT VS 9 TURN-ON AND OFF TH PROTECTION 6 GND D02AU1431 2/7 TDA7253L ELECTRICAL CHARACTERISTCS (Refer to the test and application circuit, VS = 20V; RL = 8; Gv = 30dB; f = 1KHz; Tamb = 25C unless otherwise specified). Symbol VS VO Iq PO d RI fL fH eN SVR VTMUTE VTPLAY AM IqMUTE Parameter Supply Voltage Quiescent Output Voltage Total Quiescent Current Output Power Total Harmonic Distortion Input Resistance Low Frequency Roll-off (-3dB) High Frequency Roll-off (-3dB) Total Input Noise Voltage Supply Voltage Rejection Mute Threshold Play Threshold Mute Attenuation Quiescent Current Mute 5 80 100 7 10 A Curve; RS = 10K f = 22Hz to 22KHz; RS = 10K RS = 10K; f = 100Hz; Vr = 0.5V d = 10% d = 1% PO = 1W 100 Test Condition Min. 10 11.5 40 6 5 0.03 200 40 80 2 2.5 60 0.8 10 Typ. Max. 24 Unit V V mA W W % K Hz KHz mV V dB V V dB mA CF Note: to avoid pop-on noise ------------- 1 C S VR Figure 2. Output Power vs. Supply Voltage POUT (W) f = 1KHz RL = 8 12 D02AU1432 Figure 4. Distortion vs Output Power d%10 5 2 1 0.5 8 d = 10% d = 1% 4 0.2 0.1 0.05 0.02 f =1KHz f =15KHz 0 0.01 100m 8 12 16 20 VS(V) 200m 300m 500m700m 1 Pout (W) 2 3 4 5 6 78 Figure 3. Quiescent Current vs. Supply Voltage Iq (mA) D02AU1433 45 40 35 30 25 20 8 12 16 20 VS(V) 3/7 TDA7253L Figure 5. PC Board Component Layout Figure 6. Evaluation Board Top Layer Layout Figure 7. Evaluation Board Bottom Layer Layout 4/7 TDA7253L HEAT SINK DIMENSIONING: In order to avoid the thermal protection intervention, that is placed approximatively at Tj = 150C, it is important the dimensioning of the Heat Sinker RTh (C/W). The parameters that influence the dimensioning are: - Maximum dissipated power for the device (Pdmax) - Max thermal resistance Junction to case (RTh j-c) - Max. ambient temperature Tamb max - Quiescent current Iq (mA) Example: VCC = 20V, Rload = 8ohm, RTh j-c = 9 C/W , Tamb max = 50C Pdmax = (N channels) * 2V c c ------------------------- + I q V c c 2 Rloa d 2 Pdmax = 1 * ( 2.5 ) + 0.5 = 3W 150 - T amb max 150 - 50 (Heat Sinker) RTh c-a = --------------------------------------- - RTh j-c = ---------------------- - 9 = 24.3 C/W P d max 6 In figure 8 is shown the Power derating curve for the device. Figure 8. Power derating curve 10 8 a) (a) 6 Pd (W) (c) 4 (d) 2 (b) b) c) d) Infinite Heatsink 10 C/ W 15 C/ W 20 C/ W 0 0 40 80 Tamb (C) 120 160 5/7 TDA7253L mm MIN. A a1 B b1 b3 C c1 c2 D d1 e e3 L L1 L2 L3 L4 M N P 3.2 1 0.15 3.1 3 17.6 0.25 0.254 0.126 0.039 0.006 14.5 2.54 22.86 0.122 0.118 0.693 0.010 0.010 0.85 3.3 0.43 1.32 23.7 0.571 0.100 0.900 0.5 1.6 0.033 0.130 0.017 0.052 0.933 2.7 TYP. MAX. 7.1 3 24.8 0.020 0.063 0.106 MIN. inch TYP. MAX. 0.280 0.118 0.976 DIM. OUTLINE AND MECHANICAL DATA SIP10 D C L1 N P M L3 c2 d1 L2 a1 1 0 1 L4 L b3 e3 B b1 e c1 SIP10 6/7 A TDA7253L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. STMicroelectronics acknowledges the trademarks of all companies referred to in this document. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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