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N-CHANNEL 60V - 0.032 - 24A DPAK STripFETTM II POWER MOSFET
TYPE STD20NF06
s s s s
STD20NF06
PRELIMINARY DATA
VDSS 60 V
RDS(on) < 0.040
ID 24 A
s
TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
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DPAK TO-252 (Suffix "T4")
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s AUDIO AMPLIFIERS s POWER TOOLS s AUTOMOTIVE ENVIRONMENT
Ordering Information
SALES TYPE STD20NF06 MARKING STD20NF06 PACKAGE TO-252 PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 20 24 17 96 60 0.4 10 300 -55 to 175
(1) ISD 24A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID =10 A, VDD = 45V
Unit V V V A A A W W/C V/ns mJ C
(*) Pulse width limited by safe operating area. May 2003
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD20NF06
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max 2.5 100 275 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 12 A Min. 2 0.032 Typ. Max. 4 0.040 Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 12 A Min. Typ. 15 690 170 68 Max. Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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STD20NF06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 10 A VDD = 30 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 48 V ID= 20 A VGS= 10 V Min. Typ. 10 30 23 5 7.5 31 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 10 A VDD = 30 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 30 8 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.
Test Conditions
Min.
Typ.
Max. 24 96
Unit A A V ns nC A
ISD = 96 A
VGS = 0 65 150 4.6
1.5
di/dt = 100A/s ISD = 96 A VDD = 20 V Tj = 150C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle (*)Pulse width limited by safe operating area.
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STD20NF06
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STD20NF06
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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STD20NF06
*on sales type
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STD20NF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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