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| N-CHANNEL 30V - 0.009 - 11A SO-8 LOW GATE CHARGE STripFETTM POWER MOSFET TYPE STS11NF30L s s s s STS11NF30L VDSS 30 V RDS(on) <0.012 ID 11 A TYPICAL RDS(on) = 0.009 @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS s AUTOMOTIVE SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(**) Ptot dV/dt (1) Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Value 30 30 18 11 7 44 2.5 0.02 4 -55 to 150 150 (1) ISD 11A, di/dt 290A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/C V/ns C C Tj Max. Operating Junction Temperature (**) Pulse width limited by safe operating area. (*) Current limited by the package February 2002 . 1/8 STS11NF30L THERMAL DATA Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Typ 50 150 C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 18 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 5.5 A ID = 5.5 A Min. 1 0.009 0.014 0.012 0.0185 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=25V ID = 5.5 A Min. Typ. 10 1470 490 110 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STS11NF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 35 A VDD = 15 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 24V ID= 11A VGS=4.5V Min. Typ. 20 65 19 5 10 25 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 5.5 A VDD = 15 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 35 24 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A VGS = 0 75 110 2.9 Test Conditions Min. Typ. Max. 11 44 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 11 A VDD = 20 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS11NF30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS11NF30L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS11NF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS11NF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS11NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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