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| (R) BTA24BW/CW BTB24BW/CW SNUBBERLESS TRIACS .HI .HI .V .BTA FEATURES GH COMMUTATION : (dI/dt)c > 22A/ms without snubber GH SURGE CURRENT : ITSM = 250A DRM UP TO 800V family: Insulated voltage = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB24 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESSTM concept offers suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s Parameter BTA BTB Tc = 75 C Tc = 95 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Value 25 25 260 250 312 20 100 - 40 to + 150 - 40 to + 125 260 C C C A2s A/s Unit A A A G A1 A2 TO220AB (Plastic) ITSM I2t dI/dt Symbol Parameter BTA/BTB24-... BW/CW 600 700 700 800 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 600 V August 1998 Ed : 2A 1/5 BTA/BTB24 BW/CW THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 2.3 1.3 1.7 1.0 Unit C/W C/W C/W C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix BW IGT VD=12V (DC) RL=33 Tj=25C I-II-III MIN MAX VGT VGD IL VD=12V (DC) RL=33 Tj=25C Tj=125C Tj=25C I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * (dI/dt)c * IT= 250mA gate open ITM= 35A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open Without snubber Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN 1000 22 60 120 75 1.5 5 3 500 13 4 50 1.3 0.2 50 80 50 mA V A mA V/s A/ms CW 2 35 V V mA mA Unit VD=VDRM RL=3.3k IG=1.2 IGT * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 BTA/BTB24 BW/CW ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 25 VDRM / VRRM V 600 700 800 BTB (Uninsulated) 25 600 700 800 Sensitivity Specification BW X X X X X X CW X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current. P(W) 30 25 20 15 10 180 5 0 0 IT(RMS)(A) 5 10 15 20 25 Fig.2 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. (BTA) P(W) Rth=0C/W Fig.3 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact.(BTB) P(W) Tcase (C) 95 Rth=0C/W Rth=3C/W 30 25 20 15 10 5 Tcase (C) 75 85 30 25 20 100 Rth=2C/W Rth=3C/W 105 Rth=1C/W 95 Rth=2C/W 15 10 5 0 0 110 115 120 105 Rth=1C/W 115 Tamb(C) Tamb(C) 0 0 20 40 60 80 100 120 140 125 20 40 60 80 100 120 140 125 3/5 BTA/BTB24 BW/CW Fig.4 : RMS on-state current versus case temperature. Fig.5 : Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1.00 Zth(j-c) 30 25 20 15 10 5 IT(rms)(A) BTB BTA 0.10 Zth(j-a) Tcase(C) 0 0 25 50 75 100 125 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT,IH[Tj]/IG,IH[Tj=25C] Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. 2.5 2.0 IGT 1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH 220 200 180 160 140 120 100 80 60 40 20 0 ITSM(A) Tj initial=25C F=50Hz Number of cycles 1 10 100 1000 Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). 1000 ITSM(A),It(As) ITSM Tj initial=25C 300 100 ITM(A) 500 Tj=Tj max. It 10 200 tp(ms) 100 1 2 5 10 Tj=25C Tj max.: Vto=0.85V Rt=16m VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4/5 BTA/BTB24 BW/CW PACKAGE MECHANICAL DATA TO220AB Plastic B C REF. b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M DIMENSIONS Millimeters Inches Min. Max. Min. Max. 15.20 15.90 0.598 0.625 3.50 4.20 0.137 0.165 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 16.40 Typ. 0.646 Typ. 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 Typ. 0.102 Typ. Cooling method : C Marking : type number Weight : 2.1 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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