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| (R) TS420-B/T SENSITIVE SCR FEATURES IT(RMS) = 4A VDRM/VRRM = 400, 600V, 700V IGT < 200A SMD PACKAGE DESCRIPTION The TS420-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conductionangle) Average on-state current (180 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2 t dI/dt T stg Tj Tl Symbol I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA dIG /dt = 0.1 A/s. Storage junction temperature range Operating junction temperature range Maximum temperature for soldering during 10s Parameter 400B/T VDRM VRRM Repetitive peak off-state voltage Tj = 125C RGK = 220 400 Tc= 115C Tc= 115C tp = 8.3ms tp = 10ms tp = 10ms Value 4 2.5 33 30 4.5 100 - 40 to + 150 - 40 to + 125 260 TS420600B/T 600 700B/T 700 V A2s A/s C C Unit Unit A A A A A A K G K A G DPAK (Plastic) TS420-B TO-220AB (Plastic) TS420-T November 1998 - Ed: 8A 1/6 TS420-xxxB/T THERMAL RESISTANCES Symbol Rth(j-a) Parameter Junction to ambient (S=0.5cm2) DPAK TO-220AB Rth(j-c) Junction to case for DC DPAK / TO-220AB Value 70 60 3.0 C/W Unit C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRG IH VTM IDRM IRRM dV/dt Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k RGK = 220 IRG = 10A IT= 50mA RGK = 1 K Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Type MAX MAX MIN MIN MAX MAX MAX MAX MIN Value 200 0.8 0.1 8 5 1.6 5 1 5 Unit A V V V mA V mA mA V/s IGM = 1.2 A (tp = 20 s) ITM= 8A tp= 380s VD= VDRM VR= VRRM RGK = 220 RGK = 220 VD=67%VDRM RGK = 220 Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlationbetweenmaximum averagepower dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) Tcase (C) Rth=10C/W Rth=15C/W Rth=37C/W Rth=5C/W Rth=0C/W P(W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 IT(av)(A) 1.5 2.0 2.5 360 = 120 = 90 = 60 = 180 4.0 3.5 3.0 D.C. = 180 115 2.5 2.0 1.5 1.0 0.5 0.0 Tamb(C) 0 25 50 75 100 125 125 120 = 30 3.0 3.5 2/6 TS420-xxxB/T Fig. 3-1: Average and DC on-state current versus case temperature (TO-220AB). Fig. 3-2: Average and DC on-state current versus ambient temperature(device mounted on FR4 with recommended pad layout) (DPAK). IT(av)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IT(av)(A) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 DC DC =180 =180 Tcase(C) 0 25 50 75 100 125 Tamb(C) 0 25 50 75 100 125 Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recomended pad layout) (DPAK). K=[Zth(j-c)/Rth(j-c)] 1.0 1.00 K=[Zth(j-a)/Rth(j-a)] 0.5 0.10 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH [Tj] / IGT [Tj=25C] ,IH 2.0 1.8 IGT 1.6 1.4 1.2 IH 1.0 0.8 0.6 0.4 0.2 Tj(C) 0.0 -40 -20 0 20 40 60 ITSM(A) 35 30 25 20 15 10 5 Number of cycles 1 10 100 1000 Tj initial=25 C F=50Hz 80 100 120 140 0 3/6 TS420-xxxB/T Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-statecharacteristics(maximum values). ITSM(A),I t(A s) 100 ITSM Tj initial=25C ITM(A) 50.0 10.0 Tj max.: Vto=0.85V Rd=90m Tj=Tj max. 10 It 1.0 Tj=25C tp(ms) 1 1 2 5 10 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m) (DPAK). Rth(j-a) (C/W) 100 80 60 40 20 S(cm ) 0 0 2 4 6 8 10 12 14 16 18 20 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T (C) 250 200 245C 215C 150 100 Epoxy FR4 board 50 0 Metal-backed board t (s) 0 40 80 120 160 200 240 280 320 360 ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment TS SENSITIVE SCR CURRENT 4 20 - 600 B/T PACKAGE: B: DPAK T: TO-220 SENSITIVITY VOLTAGE 4/6 TS420-xxxB/T PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 Millimeters Inches Min. Typ. Max Min. Typ. Max. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 1.00 0.023 8 0 2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 0.031 0.039 8 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 2.3 2.3 1.6 5/6 TS420-xxxB/T PACKAGE MECHANICAL DATA TO-220AB(Plastic) REF. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A DIMENSIONS Millimeters Inches Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 10 10.40 16.4 typ. 13 2.65 15.25 6.20 3.50 3.75 14 2.95 15.75 6.60 3.93 3.85 0.393 0.409 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.147 0.551 0.116 0.620 0.259 0.154 0.151 2.6 typ. 0.102 typ. Type TS420-B Marking TS420x0 Package DPAK Weight 0.3 g. Base qty 75 2500 Delivery mode Tube Tape and Reel Tube TS420-T TS420x00T TO-220AB 20 g. 50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 6/6 |
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