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| STK3NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST K3NA60 s s s s s s s V DSS 600 V R DS(on) <4 ID 2.7 A TYPICAL RDS(on) = 3.3 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD SOT82 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor St orage Temperature Max. Operating Junction Temperature o o o Value 600 600 30 2.7 1.8 10.8 60 0.48 -65 to 150 150 Uni t V V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area March 1996 1/9 STK3NA60 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 2.08 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, < 1%) Max Valu e 2.7 40 1.6 1.8 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A VGS = 0 Min. 600 250 1000 100 Typ . Max. Un it V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = 30 V ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 10V Test Cond ition s ID = 250 A I D = 1.5 A ID = 1.5 A Tc = 100 oC 2.9 Min. 2.25 Typ . 3 3.3 Max. 3.75 4 8 Un it V A V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 1.5 A VGS = 0 Min. 1 Typ . 2 380 57 17 500 75 23 Max. Un it S pF pF pF 2/9 STK3NA60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on T ime Rise Time Turn-on Current Slope Test Cond ition s V DD = 300 V ID = 1.5 A VGS = 10 V R G = 18 (see test circuit, figure 3) V DD = 400 V ID = 3 A R G = 18 VGS = 10 V (see test circuit, figure 5) V DD = 480 V I D = 3 A V GS = 10 V Min. Typ . 14 25 300 Max. 20 35 Un it ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 22 6 9 30 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 480 V ID = 3 A VGS = 10 V R G = 18 (see test circuit, figure 5) Min. Typ . 13 24 12 Max. 18 34 17 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.7 A V GS = 0 460 5.6 24 I SD = 3 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 2.7 10.8 1.6 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STK3NA60 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STK3NA60 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STK3NA60 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/9 STK3NA60 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STK3NA60 SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 2.54 TYP. MAX. 7.8 11.3 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 DIM. C A F H c1 b b1 e3 e D B P032A 8/9 STK3NA60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9 |
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