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(R)
STTA206S
TURBOSWITCH TM "A". ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 2A 600V 20ns 1.5V
A K
FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT DEVICE
SMC
DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH "A" family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "Freewheel Mode" operations and is particulary suitable and efficient ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM IF(RMS) IFRM Tj Tstg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current (tp = 5 s, f = 5kHz) Maximum operating junction temperature Storage temperature range Value 600 600 8 50 125 - 65 to + 150 Unit V V A A C C in Motor Control Freewheel applications and in Booster diode applications in Power Factor Control circuitries. Packaged in SMC surface mount envelope, these 600V devices are particularly intended for use on 240V domestic mains.
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 2D
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STTA206S
THERMAL AND POWER DATA Symbol Rth(j-I) P1 Parameter Junction to lead Conduction power dissipation (see fig. 2) Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 1.5A = 0.5 Tlead= 72C Tlead= 67C Conditions Value 21 2.5 Unit C/W W
Pmax
2.8
W
STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2) Symbol VF IR
*
Parameter Forward voltage drop Reverse leakage current
Test Conditions IF = 2A VR = 0.8 x VRRM Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min
Typ 1.1 400
Max 1.75 1.5 20 1200
Unit V A
**
Test pulses widths : * tp = 380 s, duty cycle < 2% ** tp = 5 ms , duty cycle < 2%
DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING (see Fig. 3) Symbol trr Parameter Reverse recovery time Maximum recovery current Softness factor Test Conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR = 30V Tj = 125C VR = 400V dIF/dt = -16 A/s dIF/dt = -50 A/s Tj = 125C VR = 400V dIF/dt = -50 A/s IF = 2A 1.2 2.0 IF = 2A TBD Min Typ 20 50 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING (see Fig.8) Symbol tfr VFp Parameter Forward recovery time Peak forward voltage Test Conditions Tj = 25C IF = 1 A dIF/dt = 8 A/s measured at, 1.1 x VF max Min Typ Max 500 10 Unit ns V
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STTA206S
APPLICATION DATA The TURBOSWITCHTM "A" is especially designed to provide the lowest overall power losses in any "Freewheel Mode" application (see fig. 1) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode P1 Watts (Fig. 2)
REVERSE LOSSES in the diode P2 Watts (Fig. 2)
SWITCHING LOSSES in the diode OFF : P3 Watts ON : P4 Watts (Fig. 3 & 4)
SWITCHING LOSSES in the transistor due to the diode P2 Watts (Fig. 3)
Fig. 1 : "FREEWHEEL" MODE
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH "A"
IL
VR
t T F = 1/T = t/T
LOAD
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STTA206S
APPLICATION DATA (Cont'd) Fig. 2 : STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 x IF(AV) + Rd x IF2(RMS)
IF Rd VR V IR V tO VF
with
Vt0 = 1.15 V Rd = 0.175 Ohm (Max values at 125C) Reverse losses : P2 = VR x IR x (1 - )
Fig. 3 : TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x (3 + 2 x S) x F 6 x dIF dt VR x IRM x IL x (S + 2) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
S = tb / ta
RECTIFIER OPERATION
Turn-off losses (in the diode) :
P3 =
VR x IRM 2 x S x F 6 x dIF dt
P3 and P5 are suitable for power MOSFET and IGBT
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STTA206S
APPLICATION DATA (Cont'd) Fig. 4 : TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
t
0 VF V Fp
1.1V F 0 tfr
VF t
Ratings and characteristics curves are ON GOING.
Fig. 5: Conduction losses versus average current.
P1(W) 3.0 2.5 2.0 1.5
= 0.05 = 0.1 = 0.2 = 0.5
Fig. 6: Switching OFF losses versus dIF/dt.
0.35 0.30 0.25 P3(W)
Tj=125C F=20KHz VR=400V
IL=4A
=1
0.20 0.15
IL=2A
1.0 0.5 IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.10 0.05 0.00 0 20 40 60 80 dIF/dt(A/us) 100 120 140 160 180 200
Fig. 7: Switching ON losses versus dIF/dt.
0.2
Fig. 8: Switching losses in transistor due to the diode.
P5(W)
5.0 4.5
Tj=125C F=20KHz VR=400V IL=4A
P4(W)
Tj=125C F=100KHz IF=IF(AV)
0.15
4.0 3.5 3.0
0.1
2.5 2.0
IL=2A
0.05 dIF/dt(A/us) 0 0 20 40 60 80 100 120 140 160 180 200
1.5 1.0 0.5 0.0 0 20 40 60
dIF/dt(A/us)
80
100
120
140
160
180
200
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STTA206S
Fig. 9: Forward voltage drop versus forward current (maximum values).
IFM(A)
Fig. 10: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout).
Zth(j-a) (C/W)
1E+0
= 0.5
5E+1 1E+1
Tj=125C
= 0.2 = 0.1
1E+0
Tj=25C
1E-1
1E-1 VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Single pulse
T
tp(s)
1E-2 1E-3 1E-2 1E-1 1E+0 1E+1
=tp/T
tp
1E+2 5E+2
Fig. 11: Peak reverse recovery current versus dIF/dt (90% confidence).
10 9 8 7 6 5 4 3 2 1 0 IRM(A)
Fig. 12: Reverse recovery time versus dIF/dt (90% confidence).
300 trr(ns)
VR=400V Tj=125C
VR=400V Tj=125C IF=2*IF(av)
250 200
IF=IF(av)
150
IF=2*IF(av)
100 50
IF=IF(av)
dIF/dt(A/s) 0 50 100 150 200
0 0 20 40
dIF/dt(A/s) 60 80 100 120 140 160 180 200
Fig. 13: Softness factor (tb/ta) versus dIF/dt (typical values).
1.8 1.6 1.4 1.2 1.0 S factor
IF<2*IF(av) VR=400V Tj=125C
Fig. 14: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
1.1
1.0
S factor
0.9
IRM
0.8
0.8 dIF/dt(A/s) 0.6 0 20 40 60 80 100 120 140 160 180 200
Tj(C) 0.7 25 50 75 100 125
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STTA206S
Fig. 15: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 22 20 18 16 14 12 10 8 6 4 2 0
300
IF=IF(av) Tj=125C
Fig. 16: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns)
IF=IF(av) Vfr=1.1*VFmax Tj=125C
250 200 150 100 50 dIF/dt(A/s) 0 0 20 40 60 80
dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200
100 120 140 160 180 200
Fig. 17: Junction capacitance versus reverse voltage applied (typical values).
10 C(pF)
F=1MHz
5
2 VR(V) 1 1 10 100 200
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STTA206S
PACKAGE MECHANICAL DATA SMC DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25
Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246
D
A1 A2 b
1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55
E
c
A1
E E1
C L
A2
E2
E2 b
D
FOOTPRINT DIMENSIONS (in millimeters)
3.3
2.0
Type STTA206S
4.2
Marking T51
2.0
Package SMC Weight 0.243g Base qty 2500 Delivery mode Tape & Reel
Band indicates cathode Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

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