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(R)
S30xxxH
SCR
FEATURES IT(RMS) = 30A VDRM = 800V to 1200V High surge current capability
K A G
DESCRIPTION The S30xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 90C Tc= 90C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 30 19 350 320 512 100 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A
I2t dI/dt Tstg Tj Tl
Symbol VDRM VRRM
January 1995
Parameter N Repetitive peak off-state voltage Tj = 125C 800
Voltage P 1000 V 1200
Unit V
1/5
S30xxxH
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 1.1 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 14 VD=12V (DC) RL=33 Tj= 25C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=33 VD=VDRM RL=3.3k Tj= 25C Tj= 125C MAX MIN TYP MAX MAX MAX MAX MAX MIN MAX 115 230 1.6 10 5 500 100 30 75 1.5 0.2 2 100 200 Sensitivity 16 20 50 V V s mA mA V A mA V/s s mA Unit IGM = 4A (tp = 20 s)
VD=VDRM ITM= 3 x IT(AV) Tj= 25C dIG/dt = 1.5A/s IG = 200mA IT= 500mA Gate open IG=1.2 IGT ITM= 60A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open ITM= 3 x IT(AV) VR =35V dI/dt=25A/s tp=100s dV/dt=25V/s VD= 67%VDRM Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C
ORDERING INFORMATION
S
SCR MESA GLASS CURRENT
2/5
30
16
SENSITIVITY
P
H
PACKAGE : H = TO220 Non-insulated VOLTAGE
(R)
S30xxxH
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W) Tcase (o C)
Rth = 0 o C/W o 1 C/W 2 o C/W 4 o C/W
P (W)
30
360
O
30 25
DC
o
-85
25 20
= 180
-95
20 15
= 180
o
15
= 120
o
-105
10
= 60
o
= 90
o
10 -115 5
I T(AV)(A) Tamb ( C)
o
5 0 0 2 4 6 8
= 30 o
10 12 14 16 18 20 22 24
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus case temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
35
DC
30
Zt h( j-c)
25 20 15 10 5 0
0
Tcase ( C)
o
= 180
o
0.1
Zt h( j-a)
tp (s)
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
350
Tj initial = 25 C
o
300 250 200 150 100 50
Tj(oC)
Ih
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0 1
10
100
100 0
3/5
(R)
S30xxxH
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Tj initial = 25oC
Fig.8 : On-state characteristics (maximum values).
2000 1000
I TM (A)
1000
Tj initial o 25 C
I TSM
I2 t
100
Tj max
10
Tj max Vto =0.95V Rt =0.0096
tp(ms)
VTM (V)
100 1
10
1 0
0.5
1
1.5
2
2.5
3
3.5
4
4/5
(R)
S30xxxH
PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
(R)

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