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| 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features * * * Low on-resistance RDS(on) = 0.12 typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 12 G 1 3 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796L, 2SK2796S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings 60 20 5 20 5 5 2.14 20 150 -55 to +150 Unit V V A A A A mJ W C C Body-drain diode reverse drain current IDR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: IAP Note3 EAR Note3 Pch Note2 Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK2796L, 2SK2796S Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol Min Typ -- -- -- -- -- 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 Max -- -- 10 10 2.0 0.16 0.25 -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ID = 5A, VGS = 0 Test Conditions ID = 10mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16V, VDS = 0 ID = 1mA, VDS = 10V ID = 3 A, VGS = 10V Note4 ID = 3A, VGS = 4V Note4 ID = 3A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 3A RL = 12 V(BR)DSS 60 V(BR)GSS 20 IDSS IGSS -- -- 1.0 -- -- 2.5 -- -- -- -- -- -- -- -- Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test trr td(on) tr td(off) tf VDF -- 40 -- ns IF = 5A, VGS = 0 diF/ dt =50A/s 2SK2796L, 2SK2796S Main Characteristics Power vs. Temperature Derating 40 Pch (W) Channel Dissipation 30 20 10 0 50 100 150 Tc (C) 200 Case Temperature 2SK2796L, 2SK2796S Package Dimensions Unit: mm 1.7 0.5 6.5 0.5 5.4 0.5 2.3 0.5 0.55 0.1 5.5 0.5 7.2 1.7 0.5 1.15 0.1 6.5 0.5 5.4 0.5 2.3 0.5 0.55 0.1 3.1 0.5 16.2 0.5 5.5 0.5 0.8 0.1 9.5 0.5 1.2 Max 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 0.55 0.1 0 ~ 0.25 0.55 0.1 1.5 Max 2.5 0.5 2.29 0.5 2.29 0.5 L type S type Hitachi Code EIAJ ( L type) EIAJ ( S type) JEDEC DPAK SC-63 SC-64 -- |
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