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| 2SK2085 Silicon N Channel MOS FET Application TO-92 MOD. High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter 2 1 1 3 2 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 1.0 4.0 1.0 0.9 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2085 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.5 A VGS = 10 V * ID = 0.5 A VGS = 4 V * ID = 0.5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.5 A VGS = 10 V RL = 60 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.6 10 100 2.0 0.9 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 0.75 1.35 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.7 1.2 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 130 50 12 7 6.5 55 20 0.85 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 1.0 A, VGS = 0 IF = 1.0 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 80 -- ns -------------------------------------------------------------------------------------- 2SK2085 Power vs. Temperature Derating 1.6 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 0.01 0.003 Maximum Safe Operation Area 10 10 1.2 PW Channel Dissipation 0.8 0.4 Drain Current DC Operation in Op er this area is at ion limited by R DS(on) m s = 10 (1 m sh s ot ) 1 0 s s Ta = 25C 0.3 1 3 10 30 100 200 0 50 100 150 Tc (C) 200 0.001 0.1 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics 5 6V Typical Transfer Characteristics 5 V DS = 10 V Pulse Test Pulse Test 4V (A) 3.5 V ID Drain Current 3V 2.5 V VGS = 2 V I D (A) 4 8V 10 V 5V 4 3 3 Drain Current 2 2 -25 C Tc = 25 C 75 C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 1 1 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 2SK2085 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 1.0 Static Drain to Source State Resistance vs. Drain Current 2 Pulse Test 1 V GS = 4 V 10 V 0.8 1A 0.6 0.5 0.4 0.5 A I D = 0.2 A 0.2 0.2 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.1 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.2 A 0.5 A ID=1A V GS = 4 V 1A 0.5 A 0.2 A 10 V Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 25 C 75 C 2 1 0.5 1.2 0.8 0.4 0 -40 0.2 0.1 0.05 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2085 Body-Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Capacitance C (pF) di / dt = 50 A / s V GS = 0, Ta = 25 C 100 Typical Capacitance vs. Drain to Source Voltage 1000 500 200 100 50 20 10 5 2 1 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss Coss Ciss 50 20 10 0.02 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 200 20 200 100 Switching Time t (ns) 50 20 10 5 2 0.02 Switching Characteristics 160 V DD = 25 V 50 V 80 V VDS VGS I D= 1 A 16 t d(off) V GS = 10 V V DD = 30 V PW = 2 s duty < 1 % tf Drain to Source Voltage 120 8 80 4 Gate to Source Voltage t d(on) tr 40 V DD = 25 V 50 V 80 V 2 8 6 8 Gate Charge Qg (nc) 2 0 10 0 0.05 0.1 0.2 Drain Current 0.5 1 I D (A) 2 2SK2085 Reverse Drain Current vs. Souece to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4 3 2 10 V V GS = 0, -5 V 1 5V 0.4 0.8 1.2 1.6 2.0 0 Drain to Source Voltage V DS (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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