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| 2SK1698 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. * Suitable for DC - DC converter, motor drive, power switch, solenoid drive * * * * 2 1 4 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** *** Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 0.3 1.2 0.3 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- PW 10 s, duty cycle 1 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "FY". 2SK1698 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.2 A VGS = 10 V * ID = 0.2 A VGS = 4 V * ID = 0.2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.2 A VGS = 10 V RL = 150 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 3.5 10 50 2.0 4.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 4.5 6.5 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.22 0.35 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 35 14 3.5 2 4 17 15 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 0.3 A, VGS = 0 IF =0.5 A, VGS = 0, diF/dt = 50 A/s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 80 -- ns -------------------------------------------------------------------------------------- See characteristic curves of 2SK1337. 2SK1698 Power vs. Temperature Derating 1.6 Maximum Safe Operation Area 5 3 Drain Current I D (A) 1 s s 10 100 s m Pch (W) 1.2 PW Channel Dissipation 0.3 ar (o ea n) O is per lim at ite ion d in by th R is 1 = 10 0.8 s m 0.1 0.03 0.01 DC 0.4 O pe ra tio n (1 DS o sh t) Ta = 25C 1 3 10 30 100 0 50 100 Ambient Temperature 150 Ta (C) 200 0.005 0.1 0.3 Drain to Source Voltage VDS (V) |
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