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| 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features * Low on-resistance * High speed switching * 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 12 3 2, 4 12 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 120 20 3 12 3 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1254 L , 2SK1254 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static Drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 120 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * --------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -- -- 10 100 A A -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.4 -- -- -- -- -- -- -- -- -- 0.30 0.35 4.0 420 190 25 5 20 150 45 0.95 2.0 0.40 0.55 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, diF/dt = 50 A/s ID = 2 A, VGS = 10 V, RL = 15 V -------------------------------------------------------------------------------------- -------------------- --------------------- ID = 2 A, VGS = 4 V * ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 160 -- ns -------------------------------------------------------------------------------------- 2SK1254 L , 2SK1254 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) 10 5 2 1.0 0.5 Maximum Safe Operation Area 10 s 10 20 PW DC O 0 s = 10 m 1 s m (1 Sh s n( tio ra pe 10 0 50 100 Case Temperature TC (C) 150 ot ) Operation in this 0.2 area is limited by RDS (on) 0.1 Ta = 25C 0.05 3 30 1 10 100 300 1,000 Drain to Source Voltage VDS (V) = TC 25 C ) Typical Output Characteristics 5 10 V 4 Drain Current ID (A) 3V 3 Drain Current ID (A) Pulse Test 4V 4 5 Typical Transfer Characteristics VDS = 10 V Pulse Test 3 2 2.5 V 1 VGS = 2 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 2 1 75C TC = 25C -25C 0 1 2 3 4 Gate to Source Voltage VGS (V) 5 2SK1254 L , 2SK1254 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 2.0 Drain to Source Saturation Voltage VDS (on) (V) PulseTest 1.6 5 Static Drain to Source on State Resistance vs. Drain Current 2 1.0 0.5 Pulse Test VGS = 4 V 1.2 3A 0.8 2A 0.4 ID = 1 A 10 V 0.2 0.1 0.05 0.2 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 0.5 1.0 2.0 5.0 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 1.0 Pulse Test ID = 3 A 0.6 1.2 A VGS = 4 V 3A 1.2 A 10 Forward Transfer Admittance vs. Drain Current VDS = 10 V 5 Pulse Test 2 1.0 0.5 -25C TC = 25C 75C 0.8 0.4 VGS = 10 V 0.2 0.2 0.1 0.05 0.1 0 -40 0 40 80 120 Case Temperature TC (C) 160 2 0.2 0.5 1.0 Drain Current ID (A) 5 2SK1254 L , 2SK1254 S Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) Coss 200 100 50 100 Crss 10 VGS = 0 f = 1 MHz 1 20 10 5 0.1 0.2 0.5 1.0 2 5 Reverse Drain Current IDR (A) 10 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 25 V 50 V 80 V 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V PW = 2s, duty < 1 % Switching Time t (ns) 80 VDS 16 200 100 50 t d (off) 60 VGS 12 40 VDD = 80 V 50 V 25 V 8 ID = 3 A 8 tf 20 10 20 4 tr t d (on) 0 16 24 32 Gate Charge Qg (nc) 0 40 5 1.0 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 2SK1254 L , 2SK1254 S Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 3 10 V 15 V 2 1 VGS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 1.0 0.03 0.05 0.02 0.01 1 ch-c (t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM Pul se t Sho PW T 100 1m 10 m Pulse Width PW (s) 100 m 1 D = PW T 0.01 10 10 2SK1254 L , 2SK1254 S Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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