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| 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1157 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 7 28 7 60 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1157, 2SK1158 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1157 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1158 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1157 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1158 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1157 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0 -- -- -- -- -- -- -- -- -- 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF/dt = 100 A/s ID = 4 A, VGS = 10 V, RL = 7.5 ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1158 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 320 -- ns -------------------------------------------------------------------------------------- 2SK1157, 2SK1158 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 Maximum Safe Operation Area 10 0 s O is per Lim at ite ion d in by th R is Drain Current ID (A) DS 10 5 2 1.0 0.5 0.2 0.1 (o n) Ar ea 20 10 PW C O pe ra s 40 D = 1 10 (T m s s sh C m tio n (1 25 20 C ot = ) ) Ta = 25C 1 0.05 0 50 100 Case Temperature TC (C) 150 2SK1157 2SK1158 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 16 Drain Current ID (A) Pulse Test 12 5V 7V 6V 16 20 Typical Transfer Characteristics -25C VDS = 20 V Pulse Test TC = 25C Drain Current ID (A) 12 75C 8 8 4 VGS = 4 V 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 4 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 2SK1157, 2SK1158 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 10 Pulse Test 10 A 6 5 Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 Pulse Test VGS = 10 V 15 V 4 5A 2 ID = 2 A 0.2 0.1 0.05 0.5 0 4 12 16 8 Gate to Source Voltage VGS (V) 20 1.0 10 2 5 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () VGS = 10 V Pulse Test Forward Transfer Admittance yfs (S) 2.0 50 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 1.6 20 10 5 -25C TC = 25C 75C 1.2 ID = 10 A 0.8 2, 5 A 2 1.0 0.5 0.1 0.4 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 2SK1157, 2SK1158 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 5,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.2 Capacitance C (pF) 1,000 Ciss Coss 100 10 5 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 Crss 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V PW = 2 s, duty < 1% Switching Time t (ns) 200 td (off) 100 50 tr tf td (on) 400 VDS 300 VDD = 100 V 250 V 400 V VGS 16 12 200 ID = 7 A 100 VDD = 400 V 250 V 100 V 8 24 32 16 Gate Charge Qg (nc) 40 8 20 10 5 0.2 4 0 0 0.5 5 1.0 2 Drain Current ID (A) 10 20 2SK1157, 2SK1158 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5, 10 V VGS = 0, -10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.03 ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM PW 1 D = PW T 0.01 10 0.01 ulse tP ho 1S 100 1m 10 m Pulse Width PW (s) 100 m T 10 2SK1157, 2SK1158 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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