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| 2SK1151 L , 2SK1152 L , 2SK1151 S , 2SK1152 S Silicon N-Channel MOS FET Application DPAK-1 4 4 High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 12 3 12 3 2, 4 S type L type 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1151 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 1.5 6 1.5 20 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1151 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 --------------------------------------------------------------------------------------- -------- 2SK1152 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1151 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 100 A A -------------------------------------------------------------------------------------- -------- 2SK1152 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1151 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.6 -- -- -- -- -- -- -- -- -- 3.5 4.0 1.1 160 45 5 5 10 20 10 1.0 3.0 5.5 6.0 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 100 A/s ID = 1 A, VGS = 10 V, RL = 30 ID = 1 A, VDS = 20 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1152 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 220 -- ns -------------------------------------------------------------------------------------- 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 10 Maximum Safe Operation Area 10 O a pe by rea rat R is ion DS lim in (o it n) ted his 3 Drain Current ID (A) 20 1.0 0.3 0.1 0.03 10 D s 0 1 s PW = O pe ra tio n C m s s m 10 (1 ) ot Sh 25 (T C 10 = C ) 2SK1151 Ta = 25C 2SK1152 0 50 100 Case Temperature TC (C) 150 0.01 1 10 1,000 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 2.0 Pulse Test 15 V 2.0 5V 6V 10 V 4.5 V 1.2 1.6 Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 1.6 Drain Current ID (A) 1.2 0.8 4V 0.4 VGS = 3.5 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 0.8 75C 0.4 TC = 25C 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 -25C 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test Static Drain to Source on State Resistance RDS (on) () 100 50 Static Drain to Source on State Resistance vs. Drain Current 16 Pulse Test VGS = 10 V 12 2A 8 1A ID = 0.5 A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 20 10 5 15 V 4 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 Static Drain to Source on State Resistance vs. Temperature Static Drain-Source on State Resistance RDS (on) () 10 ID = 2 A 8 VGS = 10 V Pulse Test Forward Transfer Admittance yfs (S) 5 2 1.0 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test -25C 6 1A 0.5 A TC = 25C 0.5 0.2 0.1 75C 4 2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.05 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 di/dt = 100A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 100 Coss 10 200 100 50 20 10 0.05 1 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 0 Capacitance C (pF) Crss 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 100 V Drain to Source Voltage VDS (V) 250 V 400 VDS 400 V 16 Gate to Source Voltage VGS (V) 50 Switching Time t (ns) 20 100 Switching Characteristics VGS = 10 V PW = 2 s, duty < 1% td (off) 20 tf 10 5 td (on) tr 2 1 0.05 300 VGS 200 VDD = 400 V 250 V 100 V 2 ID = 1.5 A 12 8 100 4 0 4 6 8 Gate Charge Qg (nc) 0 10 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current IDR (A) 1.6 Pulse Test 1.2 0.8 0.4 5 V,10 V VGS=0, -10V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25C 0.05 0.02 ch-c(t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM D = PW T 0.03 0.01 ot Pu h 1S lse T 100 1m 10 m 100 m Pulse Width PW (s) PW 1 0.01 10 10 2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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