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| 2SJ350 Silicon P-Channel MOS FET Application TO-220FM High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * * * * 2 12 1 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -120 20 -6 -12 -6 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SJ350 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -120 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -100 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.5 10 -250 -2.0 0.7 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A VGS = -10 V * ID = -4 A VGS = -4 V * ID = -4 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -4 A VGS = -10 V RL = 7.5 ------------------------------------------------ -- 0.7 0.9 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.0 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 900 265 65 11 45 170 80 -1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -6 A, VGS = 0 IF = -6 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 240 -- ns -------------------------------------------------------------------------------------- 2SJ350 Power vs. Temperature Derating 40 Pch (W) I D (A) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 Maximum Safe Operation Area 10 s 10 0 1 s m s m s (1 sh 30 PW DC = 10 O Channel Dissipation Drain Current pe 20 tio Operation in n (T this area is c limited by R DS(on) = ra ot ) 25 10 C ) Ta = 25 C -5 -10 -20 -50 -100 -200 0 50 100 150 Tc (C) 200 -2 Case Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -10 -10 V -6 V -4 V -3.5 V (A) -8 -10 Typical Transfer Characteristics I D (A) -8 Tc = -25 C 25 C 75 C -6 -3 V ID Drain Current VGS = -2.5 V Pulse Test -6 Drain Current -4 -4 -2 -2 V DS = -10 V Pulse Test -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) 0 2SJ350 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -5 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 -10 V 0.2 0.1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -4 -3 I D = -5 A VGS = -4 V -2 -2 A -1 A 0 -12 -4 -8 Gate to Source Voltage -16 -20 V GS (V) -1 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 1.6 I D = -3 A 1.2 -1 A 0.8 VGS = -4 V -1, -2 A 0.4 0 -40 -10 V -2 A -3 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 V DS = -10 V Pulse Test 75 C 25 C Tc = -25 C 0 40 80 120 160 Case Temperature Tc (C) 0.5 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ350 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) 500 Typical Capacitance vs. Drain to Source Voltage 5000 2000 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Coss Ciss 200 100 50 20 di / dt = 50 A / s, V GS = 0 Ta = 25 C, Pulse Test 10 -5 -10 -0.1 -0.2 -0.5 -1 -2 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) V DD = -25 V -50 V -80 V V GS (V) 0 0 Switching Characteristics 500 200 100 50 20 10 5 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 V GS = -10 V, V DD = -30 V PW = 2 s, duty < 1 % t d(off) I D = -6 A Drain to Source Voltage -80 V DS -8 V DD = -25 V -50 V -80 V Gate to Source Voltage Switching Time t (ns) -40 -4 tf tr t d(on) -120 -12 -160 V GS -16 -20 100 -200 0 20 40 60 80 Gate Charge Qg (nc) Drain Current I D (A) 2SJ350 Reverse Drain Current vs. Source to Drain Voltage -10 Reverse Drain Current I DR (A) Pulse Test -8 -6 -4 -10 V -5 V -2 V GS = 0, 5 V 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 e 1 uls 0.0 tp ho 1s ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C PDM PW T 0.03 D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SJ350 Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin 10 V 50 V DD = 10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
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