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| 2SD2657K Transistors Low frequency amplifier 2SD2657K !Application Low frequency amplifier Driver !External dimensions (Units : mm) (1) 0.4 !Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (3) 1.6 2.8 0.15 0.3Min. 0~0.1 Each lead has same dimensions Abbreviated symbol : FZ 0.8 1.1 0.95 0.95 1.9 2.9 (2) (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Single pulse, PW=1ms !Packaging specifications Unit V V V A A mW C C Package Code Type 2SD2657K Basic ordering unit (pieces) Taping T146 3000 Limits 30 30 6 1.5 3 200 150 -55~+150 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 - - - 270 - - Typ. - - - - - 160 - 330 11 Max. - - - 100 100 350 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10A IC=1mA IE=10A VCB=30V VEB=6V IC=1A, IB=50mA VCE=2V, IC=100mA VCE=2V, IE=-100mA, f=100MHz VCB=10V, IE=0A, f=1MHz 1/2 2SD2657K Transistors !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 Ta=100C 10 IC/IB=20/1 IC/IB=20 Pulsed VBE(sat) 1 Ta=-40C Ta=25C Ta=100C 1 Ta=25C VCE=2V Pulsed Pulsed DC CURRENT GAIN : hFE Ta=25C Ta=-40C 100 0.1 0.1 VCE(sat) Ta=100C Ta=25C Ta=-40C IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 10 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) VCE=2V Pulsed 1000 Ta=25C VCE=2V f=100MHz 1000 tstg Ta=25C VCE=5V f=100MHz 0.1 Ta=100C Ta=25C Ta=-40C SWITCHING TIME : (ns) 100 tf 100 tdon 0.01 10 tr 0.001 0 0.5 1 1.5 10 0.01 0.1 1 10 1 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 10 Ta=25C IC=0A f=1MHz COLLECTOR CURRENT : IC (A) 1m 1 PW =1 0 s 100 Cib 10 0m ms 0.1 DC s Op Cob 10 era tio n 0.01 1 0.1 1 10 100 Ta=25C Single Pulse 0.001 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe Operating Area 2/2 |
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