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Transistor
2SD2565
Silicon NPN triple diffusion planar type
Unit: mm
For high voltage-withstand switching
0.7
6.90.1 4.0
2.50.1 (0.8)
(1.0) (0.2) 4.50.1
s Features
* High collector to base voltage VCBO * High collector to emitter voltage VCEO * Large collector power dissipation PC * Low collector to emitter saturation voltage VCE(sat) * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board
0.65 max.
(1.0)
14.50.5
0.45+0.10 -0.05
1.050.05 2.50.5
0.45+0.10 -0.05
s Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 400 400 5 1 0.5 1 150 -55 to +150 Unit V V V A A W C C
2.50.5
1
2
3
1: Emitter 2: Collector 3: Base MT-2-A1 Package
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
s Electrical Characteristics Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage * Base to emitter saturation voltage * Transition frequency Collector output capacitance Turn-on time Storage time Fall time Note) *: Pulse measurement Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions IC = 100 A, IE = 0 IC = 500 A, IB = 0 IE = 100 A, IC = 0 VCE = 5 V, IC = 30 mA IC = 250 mA, IB = 50 mA IC = 250 mA, IB = 50 mA VCB = 30 V, IE = -20 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz IC = 100 mA IB1 = 10 mA, IB2 = -10 mA VCC = 200 V 30 6 0.8 3.7 0.6 20 Min 400 400 5 30 1.5 1.5 V V MHz pF s s s Typ Max Unit V V V
(0.5)
Publication date: April 2002
SJC00276AED
1
2SD2565
PC Ta
2.0
300
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 150 4 mA 3 mA 2 mA 50 1 mA
VCE(sat) IC
10 3 1 0.3 0.1 0.03 0.01 Ta = 75C 25C -25C I C / IB = 5
Collector power dissipation PC (W)
1.6
Collector current IC (mA)
Printed circut board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion.
250
200
1.2
0.8
100
0.4
0.003 0.001
0
0
40
80
120
160
0
0
2
4
6
8
10
12
1
3
10
30
100
300
1 000
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) IC
100
hFE IC
60 VCE = 5 V
Cob VCB
24
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 5
Forward current transfer ratio hFE
30 10 3 25C 1 0.3 0.1 0.03 0.01 Ta = -25C 75C
50 Ta = 75C 40 25C 30 -25C
Collector output capacitance Cob (pF)
20
f = 1 MHz IE = 0 Ta = 25C
16
12
20
8
10
4
0
1
3
10
30
100
300
1 000
1
3
10
30
100
300
1 000
0
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00276AED
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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