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Transistors
2SD1330
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter
(0.4)
Unit: mm
6.90.1 (1.5) (1.5) 2.50.1 (1.0)
Features
* Low collector-emitter saturation voltage VCE(sat) * Low ON resistance Ron * High forward current transfer ratio hFE * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.50.1
(1.0) 2.00.2 2.40.2
0.450.05 1
R 0.9 R 0.7
1.00.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating 25 20 12 0.5 1 600 150 -55 to +150
Unit V V V A A mW C C
3 (2.5) 2 (2.5)
1.250.05
Absolute Maximum Ratings Ta = 25C
(0.85) 0.550.1
1 : Base 2 : Collector 3 : Emitter M-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1 200 60 0.13 0.4 1.2 V V MHz pF Min 25 20 12 100 800 Typ Max Unit V V V nA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification *3: Ron Measurement circuit
1 k
Rank hFE1
R 200 to 350
S 300 to 500
T 400 to 800
IB = 1 mA f = 1 kHz V = 0.3 V VB VV VA
Ron =
VB x 1 000 () VA - VB
4.10.2
4.50.1
Publication date: November 2002
SJC00217BED
1
2SD1330
PC Ta
800 1.2 IB = 4.0 mA
IC VCE
Ta = 25C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA 0.2
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 25
Collector power dissipation PC (mW)
700
1.0
500 400 300 200 100 0
Collector current IC (A)
600
10
1 Ta = 75C 25C 0.1 -25C
0 0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
0.01 0.01
0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
1 200 VCE = 2 V
fT I E
400 350 VCB = 10 V Ta = 25C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
10
300 250 200 150 100 50 0 -1
800 Ta = 75C 600 25C -25C 400
25C 1 Ta = -25C 75C
0.1
200
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 IE = 0 Ta = 25C f = 1 MHz 1 000
Ron IB
Ron measurement circuit IB = 1 mA
20
16
ON resistance Ron ()
100
VB V VA f = 1 kHz V = 0.3 V
12
10
8
1
4
0
1
10
100
0.1 0.01
0.1
1
10
Collector-base voltage VCB (V)
Base current IB (mA)
2
SJC00217BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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