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Transistors
2SC5813
Silicon NPN epitaxial planar type
Unit: mm
For DC-DC converter Features
* Low collector to emitter saturation voltage VCE(sat) * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
1
0.40+0.10 -0.05 3
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
2
(0.95) (0.95) 1.90.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 80 5 1.5 3 600 150 -55 to +150 Unit V V V A A mW C C
10
2.90+0.20 -0.05
1.1+0.2 -0.1
(0.65)
0 to 0.1
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector Mini3-G1 Package
Marking symbol: 5H
Note) *: Measuring on ceramic substrate at 15 mm x 15 mm x 0.6 mm
Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio * Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Note) *: Pulse measurement
*
Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) Cob fT
Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 40 V, IE = 0 VCE = 2 V, IC = 100 mA IC = 1 A, IB = 20 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -50 mA, f = 200 MHz
Min 80 80 5
Typ
Max
Unit V V V A mV pF MHz
0.1 200 350 15 180 500 25
0.40.2
5
Publication date: June 2002
SJC00285AED
1
2SC5813
PC Ta
250
0.9
VCE IC
400
hFE IC
IB = 3.0 mA 1.5 mA
350 Ta = 75C VCE = 2 V
Collector power dissipation PC (mW)
Collector to emitter voltage VCE (V)
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
2.5 mA 2.0 mA
200
Forward current transfer ratio hFE
300 25C 250 200 150 100 50 0 0.001
150
1.0 mA
-25C
100
50
0.5 mA
0
0
20
40
60
80 100 120 140 160
0
1
2
3
4
5
0.01
0.1
1
10
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10
100
Cob VCB
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
0.1 25C
10
Ta = 75C -25C 0.01 0.001
0.01
0.1
1
1
0
5
10
15
20
25
30
35
40
Collector current IC (A)
Collector to base voltage VCB (V)
2
SJC00285AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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