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Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.40+0.10 n0.05 0.16+0.10 -0.06
1.50+0.25 -0.05
s Features
q q
3
2.8+0.2 -0.3
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
1.1+0.2 -0.1
(Ta=25C)
Ratings 15 8 3 50 200 150 -55 ~ +150 Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC PC Tj Tstg
0 to 0.1
Parameter
Symbol
1.1+0.3 -0.1
s Absolute Maximum Ratings
(0.65)
High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1
2
EIAJ:SC-59 Mini3-G1 Package
Marking symbol : FB
s Electrical Characteristics
Parameter Emitter cutoff current Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Power gain hFE ratio
(Ta=25C)
Symbol IEBO VCBO hFE VCE(sat) VBE fT Cob Crb PG hFE(RATIO) Conditions VEB = 2V, IC = 0 IC = 100A, IE = 0 VCE = 4V, IC = 2mA IC = 20mA, IB = 4mA VCE = 4V, IC = 2mA VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCB = 6V, IE = 0, f = 1MHz VCB = 10V, IE = -10mA, f = 200MHz VCE = 4V, IC = 100A VCE = 4V, IC = 2mA 14 0.6 0.8 0.6 0.7 1.3 1.0 0.4 18 22 1.5 1.9 1.4 15 100 350 0.5 V V GHz pF pF dB min typ max 2 Unit A V
516
0.40.2
5
Transistor
PC -- Ta
250 120 Ta=25C 100 100
2SC5216
IC -- VCE
120 VCE=4V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
80 IB=600A 60 500A 400A 300A 40 200A 20 100A
Collector current IC (mA)
200
80
150
60 25C 40
100
Ta=75C
-25C
50
20
0 0 20 40 60 80 100 120 140 160
0 0 1 2 3 4 5 6
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 Ta=75C 0.1 25C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 -25C IC/IB=5 300
hFE -- IC
3.0
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=4V f=1MHz IE=0 Ta=25C
Forward current transfer ratio hFE
250 Ta=75C 200 25C 150 -25C 100
2.5
2.0
1.5
1.0
50
0.5
0 0.1
0 0.3 1 3 10 30 100 1 3 10 30 100
Collector current IC (mA)
Collector current IC (mA)
Collector to base voltage VCB (V)
517
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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