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Transistors
2SB0788 (2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958)
6.90.1
(0.4)
Unit: mm
2.50.1 (1.0) (1.5)
(1.0) 3.50.1 2.00.2 2.40.2
(1.5)
s
q q q
Features
High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C)
Ratings -120 -120 -7 -50 -20 400 150 -55 ~ +150 Unit V V V mA mA mW C C
R 0.9 R 0.7
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.00.1
(0.85)
1.250.05
0.450.05
0.550.1
3
(2.5)
2
(2.5)
1
1:Base 2:Collector 3:Emitter
M-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -20mA, IB = -2mA VCB = -5V, IE = 2mA, f = 200MHz VCE = 40V, IC = -1mA, GV = 80dB, Rg = 100k, Function = FLAT 150 150 -120 -120 -7 180 700 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
Publication date: August 2002 SJC00055AED
4.10.2
4.50.1
1
2SB0788
PC -- Ta
500 -60 VCE=-5V 450 -50 25C
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
Collector current IC (mA)
400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
-40
Ta=75C
-25C
-30
-20
- 0.3 - 0.1
25C
Ta=75C
-10
-25C
- 0.03 - 0.01 - 0.1 - 0.3
0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0
-1
-3
-10
-30
-100
Ambient temperature Ta (C)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE -- IC
600 VCE=-5V 320 280 240 200 160 120 80 40 0 - 0.1 - 0.3 0 0.1
fT -- I E
5
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=-10V Ta=25C IE=0 f=1MHz Ta=25C 4
Forward current transfer ratio hFE
500 Ta=75C 400 25C -25C
Transition frequency fT (MHz)
3
300
2
200
100
1
-1
-3
-10
-30
-100
0.3
1
3
10
30
100
0 -1
-3
-10
-30
-100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
NV -- IC
120 VCE=-10V GV=80dB Function=FLAT
100
Noise voltage NV (mV)
80
Rg=100k
60 22k 40 4.7k 20
0 - 0.01
- 0.03
- 0.1
- 0.3
-1
Collector current IC (mA)
2
SJC00055AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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