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| 2SA893, 2SA893A Silicon PNP Epitaxial Application * Low frequency high voltage amplifier * Complementary pair with 2SC1890/A Outline 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 -90 -90 -5 -50 300 150 -55 to +150 2SA893A -120 -120 -5 -50 300 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max -- -0.5 -- 800 Min Typ Max -- -- -0.5 800 -0.75 V -0.5 -- -- 10 V MHz pF dB Unit V A A Test conditions I C = -1 mA, RBE = VCB = -75 V, IE = 0 VCB = -100 V, IE = 0 VCE = -12 V, I C = -2 mA VCE = -12 V, I C = -2 mA I C = -10 mA, I B = -1 mA VCE = -12 V, I C = -2 mA VCB = -25 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -50 A Rg = 50 k, f = 1 kHz Min -90 -- -- Typ -- -- -- -- -- -- 120 1.8 2 -120 -- -- -- 250 -- -- -- -- -- 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 -- -- -- -- -- -0.75 -- -0.5 -- -- 10 -- -- -- -- VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: D 1. The 2SA893/A is grouped by h FE as follows. E 400 to 800 250 to 500 See characteristic curves of 2SA872 and 2SA872A 2 2SA893, 2SA893A 3 2SA893, 2SA893A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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