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| (R) BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=110C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Value 150 100 1600 - 40 to + 150 - 40 to + 150 Unit A A A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V ISOTOP is a trademark of STMicroelectronics. May 2000 - Ed : 2E 1/5 BYV255V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 0.4 0.25 0.1 C/W Unit C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 100 A IF = 200 A IF = 200 A Test Conditions VR = VRRM Min. Typ. Max. 100 10 0.85 1.00 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25C Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/s tr = 5 ns tr = 5 ns 10 1.5 Min. Typ. Max. 55 80 ns V Unit ns TURN-OFF SWITCHING CHARACTERISTICS Symbol IRM Tj = 100C Test Conditions IF = 100A Lp (R) 0.05H Vcc (R) 0.6 VRRM dIF/dt = -200A/s dIF/dt = -400A/s 24 Min. Typ. Max. 16 Unit A 2/5 BYV255V Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 120 110 100 90 80 70 60 =0.05 50 40 30 20 10 0 0 20 Fig.2 : Peak current versus form factor. 500 =0.5 =1 IM(A) P=40W 450 400 350 300 250 200 150 100 T I M =0.2 =0.1 P=70W =tp/T tp P=100W T P=20W I F(av)(A) 40 60 80 =tp/T tp 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 100 120 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Tj=125 oC Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. K= Rth(j-c) =0.5 =0.2 =0.1 ) 0.5 T 0.2 IFM(A) 1 10 100 1000 Single pulse 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1.0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. I M(A) Fig.6 : Average current versus temperature. (duty cycle : 0.5) I F(av)(A) ambient 1000 900 800 700 600 500 400 300 200 100 120 100 Rth(j-a)=Rth(j-c) 80 Tc=25 oC 60 =0.5 T 40 IM t =0.5 Tc=75 o C Tc=110 oC 20 =tp/T tp t(s) 0.01 0.1 1 0 0 Tamb( o C) 60 80 100 120 140 160 0 0.001 20 40 3/5 BYV255V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) 800 F=1Mhz Tj=25 oC Fig.8 : Recovery charges versus dIF/dt. QRR(uC) 2 90%CONFIDENCE Tj=100 OC 750 1 IF=IF(av) 700 650 600 550 0.2 0.5 VR(V) 500 1 10 100 200 dIF/dt(A/us) 0.1 10 20 50 100 200 500 Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. IRM(A) 50 90%CONFIDENCE 1.50 1.25 1.00 QRR;IRM[Tj]/QRR;IRM[Tj=100 o C TYPICAL VALUES IF=IF(av) 20 Tj=100 OC 10 IRM 0.75 5 0.50 2 QRR 0.25 dIF/dt(A/us) 1 10 20 50 Tj( o C) 500 100 200 0.00 0 25 50 75 100 125 150 4/5 BYV255V PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S n n n n Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Marking : Type number Cooling method : C Weight : 27 g Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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