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 Bulletin I25163 rev. B 01/94
ST230S SERIES
PHASE CONTROL THYRISTORS Stud Version
Features
Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling
230A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical
ST230S
230 85 360 5700 5970 163 149 400 to 1600 100 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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1
ST230S Series
Bulletin I25163 rev. B 01/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
04 08 ST230S 12 14 16
V DRM /VRRM , max. repetitive peak and off-state voltage V
400 800 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage V
500 900 1300 1500 1700
IDRM /I RRM max.
@ T J = TJ max
mA
30
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current
ST230S
230 85 360 5700 5970 4800 5000
Units Conditions
A C A DC @ 78C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave
I 2t
Maximum I2 t for fusing
163 148 115 105
I2 t
Maximum I2 t for fusing
1630 0.92
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Max. (typical) latching current
V 0.98 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.81 1.55 600 1000 (300) mA T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 720A, TJ = TJ max, tp = 10ms sine pulse
0.88
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time
ST230S
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s T J = TJ max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s
g
td t
q
s 100
V = 0.67% VDRM, TJ = 25C
d
ITM = 300A, T J = TJ max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s
p
2
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ST230S Series
Bulletin I25163 rev. B 01/94
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST230S
500 30
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM IGM +VGM -V GM Maximum peak gate power
ST230S
10.0 2.0 3.0 20
Units Conditions
W A T J = TJ max, t 5ms
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 5.0 MAX. 150 3.0 10 0.25 mA V V mA
TJ = TJ max, t 5ms
p
T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST230S
-40 to 125 -40 to 150 0.10
Units
C
Conditions
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10%
DC operation K/W
0.04 31 (275) 24.5 (210)
Mounting surface, smooth, flat and greased
Non lubricated threads Nm (lbf-in) Lubricated threads
wt
Approximate weight Case style
280
g See Outline Table
TO - 209AB (TO-93)
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3
ST230S Series
Bulletin I25163 rev. B 01/94
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 2 3 4 5 6 Thyristor Essential part number 0 = Converter grade
23
2
0
3
S
4
16
5
P
6
0
7 8 9
S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 16UNF threads M = Stud base metric threads (M16 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals)
8
-
V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V)
9
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST230S Series
Bulletin I25163 rev. B 01/94
Outline Table
GLASS METAL SEAL
19 (0.75) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA.
)M IN . .86 ) 22 (0 MI N. 37
4 (0.16) MAX.
FLEXIBLE LEAD C.S. 25mm 2 (0.039 s.i.) RED SILICON RUBBER 10 (0.39) RED CATHODE C.S. 0.4mm (0.0006 s.i.) WHITE GATE 2
9 .5
( 0.
Fast-on Terminals
+I 210 (8.26)
AMP. 280000-1 REF-250
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1.52)
16 (0.63) MAX .
MAX.
28.5 (1.12) MAX. DIA.
27.5 (1 .08)
MAX.
SW 32 3/4"-16UNF-2A * 35 (1.38) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 4.3 (0.17) DIA.
7) 9.5 (0 .3 MI
8.5 (0.33) DIA.
FLEXIBLE LEAD C.S. 25mm 2 RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE 220 (8.66) + 10 (0.39) WHITE SHRINK (0.039 s.i.)
+I 210 (8. 26)
90 (3.54) MIN.
RED SHRINK
38.5 (1 .52)
16 (0.63) MAX.
MAX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32 3/4"-16UNF-2A * 35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
22
(0.8 6)
MI N.
N.
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5
ST230S Series
Bulletin I25163 rev. B 01/94
Outline Table
GLASS-METAL SEAL FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 1 3 (0 .51 ) 80 (3 .1 5) MAX . 1.5 (0.06) DIA. 3 8.5 (1.5 2) MAX . DIA. 28.5 (1.12) MAX. 2 7.5 (1 .08 ) MAX . 1 6 (0.63 ) MAX . SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
3 (0.12)
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51)
80 (3.15) M AX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
6
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ST230S Series
Bulletin I25163 rev. B 01/94
Maximum Allowable Case Temperature (C) 130 ST230S Series R thJC (DC) = 0.1 K/W 120
Maximum Allowable Case Tem perature (C) 130 120 110
Conduction Period
ST230S Series R thJC (DC) = 0.1 K/W
110
Conduction Angle
100 90 30 80 70 0 100 200 300 400 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90 60 30 80 0 50 100 150 200 250 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
60
90
120 180
90 120
180
DC
Maximum Average On-state Power Loss (W)
350
300 250
180 120 90 60 30 RMS Limit
hS Rt
0. 16
K/ W
1 0. W K/
A
= 8 0 .0
200
150
K/ 0. 3 W K/ W 0 .4 K/W 0. 5 K /W
0. 2
W K/ ta el -D R
Conduction Angle
100 50 0 0 50 100 150 200 ST230S Series T J = 125C
0 .8 K/ W 1.2 K / W
250 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
450 400 350 300 250 200 RMS Limit
Conduction Period
DC 180 120 90 60 30
R
0. 1
0. 16
0.2
th SA
= 08 0. W K/ ta el -D R
K/ W
K/ W
K/ W
150 100 50 0
0 50
ST230S Series TJ = 125C
0.3 K/W 0.4 K/ W 0 .5 K/ W 0.8 K/W
1.2 K/W
100 150 200 250 300 350 400 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
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ST230S Series
Bulletin I25163 rev. B 01/94
Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)
5500 5000 4500 4000 3500 3000 2500 2000 1
6000 5500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 5000 No Voltage Reapplied Rated VRRMReapplied 4500 4000 3500 3000 2500 2000 0.01 ST230S Series
ST230S Series 10 100
0.1 Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
TJ = 25C TJ = 125C 1000
ST230S Series
100 0.5 1
1.5 2
2.5 3 3.5 4
4.5 5
5.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.1 K/W (DC Operation) 0.1
0.01 ST230S Series
0.001 0.001
0.01
0. 1 Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristic
8
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ST230S Series
Bulletin I25163 rev. B 01/94
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C
(1) PGM (2) PGM (3) PGM (4) PGM (a)
= 10W, = 20W, = 40W, = 60W,
tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms
Tj=25 C
Tj=125 C
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST230S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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