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Bulletin I25185 rev. B 03/94
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
85A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range (*) TJ
q
ST083S
85 85 135 2450 2560 30 27 400 to 1200 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
(*) t = 10 to 20s for 400 to 800V devices q t = 15 to 30s for 1000 to 1200V devices
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1
ST083S Series
Bulletin I25185 rev. B 03/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST083S 10 12
V DRM/V RRM, maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
30
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 210 200 150 70 50 V DRM 50 60
o
ITM 180 el
o
ITM 100s 270 210 190 85 50 V DRM 85 2540 1190 630 250 50 VDRM 60
ITM
Units
120 120 80 25 50 50 85
330 350 320 220 50 60
1930 810 400 100 50 85 V A/s C A
22 / 0.15F
22 / 0.15F
22 / 0.15F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST083S
85 85 135 2450 2560 2060 2160
Units
A C
Conditions
180 conduction, half sine wave
DC @ 77C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I 2t
Maximum I2t for fusing
30 27 21 19
I 2 t
Maximum I2t for fusing
300
t = 0.1 to 10ms, no voltage reapplied
2
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ST083S Series
Bulletin I25185 rev. B 03/94
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST083S
2.15 1.46 1.52 2.32
Units
Conditions
ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
Low level value of forward slope resistance
m 2.34 600 1000 mA
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST083S
1000 0.80 Min 10
q
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp = 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/s VR = 50V, tp = 200s, dv/dt: see table in device code
Typical delay time
t
q q
Max. turn-off time (*)
Max 30
s
(*) t = 10 to 20s for 400 to 800V devices; t = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST083S
500 30
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% V DRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST083S
40 5 5 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST083S Series
Bulletin I25185 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST083S
-40 to 125 -40 to 150 0.195 0.08 15.5 (137) 14 (120)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
130
TO-209AC (TO-94)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.034 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W
Conditions
T J = TJ max.
Ordering Information Table
Device Code
ST
1
08
2
3
3
S
4
12
5
P
6
F
7
K
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - P = Stud Base 1/2" 20UNF - Reapplied dv/dt code (for t q Test Condition) - t q code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 10 q 12 up to 800V 15 18 20 t (s) 15 18 only for 20 1000/1200V 25 30 *Standard part number. All other types available tq(s) 20 CN CM CL CP CK CL CP CK CJ -50 DN DM DL DP DK -DP DK DJ DH 100 EN EM EL EP EK -EP EK EJ EH 200 FN * FM * FL FP * FK * -FP * FK * FJ FH 400 HN HM HL HP HK --HK HJ HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
only on request.
4
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ST083S Series
Bulletin I25185 rev. B 03/94
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX. 2.6 (0.10) MAX. 4.3 (0.17) DIA
FLEXIBLE LEAD C.S. 16mm 2 RED SILICON RUBBER 157 (6.18) 170 (6.69 ) RED CATHODE WHITE GATE C.S. 0.4 mm 2 (.0006 s.i.) (.025 s.i.)
20 (
0.7 9)
MI N.
9.5
(0. 37 )M IN .
8.5 (0.33) DIA.
Fast-on Terminals
AMP. 280000-1 REF-250
10 (0.39)
70 (2.75) MIN.
215 (8.46) RED SHRINK 29 (1 .14) MAX. WHITE SHRINK
22.5 (0.88) MAX. DIA. 12. 5 (0.49) MAX.
21 (0.83)
MAX.
SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 (0.39 ) 5.2 (0.20) DIA.
46 (1.81)
49 (1.93)
7.5 (0.30)
1 2.5 (0.49)
21(0.83 )
M AX.
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
MAX.
1/2"-20UNF-2A
SW 27
29 (1. 14) MA X.
2.4 (0.09) 29.5 (1.16)
(0.6 5)
16.5
10 (0.39)
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5
ST083S Series
Bulletin I25185 rev. B 03/94
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 ST083S Series R thJC (DC) = 0.195 K/W 120
130 120 110
ST083S Series R thJC (DC) = 0.195 K/W
110
Conduction Angle
Conduction Period
100 90 30 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90
30
60
60
90
120
90 120
180
180
DC
80 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
180
hS Rt
2 0.
160 140
120 100 80 60
40 20 0
180 120 90 60 30 RMS Limit
W K/
0. 4K
3 0. W K/
0 .5
/W
A
=0 .1 W K/
K/
W
-D e lt aR
0.8
K/W
/W
1. 2 K
Conduction Angle
ST083S Series TJ = 125C 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
250 DC 180 120 90 60 30
R
SA th
200
0. 2
= 1 0. W K/
K/ W
0. 3K
0.4
-D
150
/W
ta el
0. 5
K /W
R
K/ W
100 RMS Limit
Conduction Period
/W 1. 2 K/W
0. 8 K
50
ST083S Series TJ = 125C
0
0 20 40 60 80 100 120 140 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST083S Series
Bulletin I25185 rev. B 03/94
2200 2000 1800 1600 1400 1200 1000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)
2600 2400
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 2200 No Voltage Reapplied Rated VRRM Reapplied 2000 1800 1600 1400 1200 ST083S Series
ST083S Series
1000 0.01
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
Fig. 6 - Maximum Non-repetitive Surge Current
1 Steady State Value R = 0.195 K/W
thJ C
10000 Instantaneous On-state Current (A)
(DC Operation)
TJ = 25C 1000 TJ = 125C
0.1
ST083S Series
ST083S Series
100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Charge - Qrr (C) 160 140 120
200 A
0.01 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Current - Irr (A) 120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 ST083S Series TJ = 125 C
ST083S Series T = 125 C
J
I TM = 500 A 300 A
I TM = 500 A 300 A 200 A 100 A 50 A
100
100 A
80 60
50 A
40 20 10
20
30
40
50
60
70
80
90 100
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of Forward Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
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ST083S Series
Bulletin I25185 rev. B 03/94
1E4
Snubber circuit R s = 22 ohms Cs = 0.15 F V D = 80% V DRM
Snubber circuit R s = 22 ohms Cs = 0.15 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2000 2500 3000 1500 1000 500 400 200 100 50 Hz
1000 1500 2000 2500 ST083S Series Sinusoidal pulse TC = 85C 500 400 200 100 50 Hz
1E2
ST083S Series Sinusoidal pulse TC = 60C
3000 tp
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
Peak On-stat e Current (A)
tp
ST083S Series Trapezoidal pulse TC = 85C di/dt = 50A/s
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
1E3
200 500 400 100 50 Hz
500 1000 1500 400 200 100 50 Hz
1E2
3000
2000 2500
1500
1000
tp
ST083S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
2000 2500
1E1 1E1
1E2
1E3
1E41E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
ST083S Series Trapezoidal pulse TC = 85C di/dt = 100A/s Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
Peak On-state Current (A)
tp
1E3
400 200 100 50 Hz
500 1000 1500 2000 2500 400 200 100 50 Hz
1000 1500
500
1E2
2000 2500 3000 tp ST083S Series Trapezoidal pulse T C = 60C di/dt = 100A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST083S Series
Bulletin I25185 rev. B 03/94
1E4
20 joules per pulse
ST083S Series Rectangular pulse tp di/dt = 50A/s 20 joules per pulse 7.5 2 1 0.5 0.3 0.2 0.1 4
Peak On-state Current (A)
1E3
0.3 0.2 0.1
0.5
1
2
3
5
10
1E2
ST083S Series Sinusoidal pulse tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = tp = tp = tp =
20ms 10ms 5ms 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST083S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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