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Bulletin I27093 rev. A 09/97
IRK.F152.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-paka Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
150 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It
2
IRK.F152..
150 90 333 4400 4600 96.8 88.4 968 15 2 up to 800 - 40 to 125
Units
A C A A A KA2 s KA2 s KA 2s s s V
o
@ 50Hz @ 60Hz
I2t tq t rr VDRM / V RRM TJ range
C
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1
IRK.F152.. Series
Bulletin I27093 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 IRK.F152.. 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125C
mA
30
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 290 365 270 220 180 50 80% VDRM 50 60 90 480 600 440 370 300 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
470 550 450 380 310 50
720 900 720 580 445 50
2600 1580 600 380 50
3640 2270 900 580 50
A A A A A V V
80% VDRM 60 90
80% VDRM 60
A/ s C
47 / 0.22 F
47 / 0.22 F
47 / 0.22 F
On-state Conduction
Parameter
IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current
IRK.F152..
150 90 333 4400 4600 3700 3870
Units Conditions
A C A A TC = 90C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
96.8 88.4 68.4 62.5
I2 t
Maximum I2t for fusing
968 0.95 1.05 0.85 0.70 1.46 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F132..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 350A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time
2 L 15
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F152..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F152..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F132..
- 40 to 125 - 40 to 150 0.17
Units Conditions
C
K/W
Per junction, DC operation
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.015 0.019 0.025 0.036 0.059 0.012 0.020 0.025 0.037 0.060
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR
T
2
F
3
15
4
2
5
-
08
6
F
7
L
8
N
8
- Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws
6 7 8 9
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: F 200V/s - tq code: L 15s - None = Standard devices N = Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0
For all types IRK...1 IRK...2
A 25 (0.98) 23 (0.91)
B ---30 (1.18)
C ---36 (1.42)
D 41 (1.61) ----
E 47 (1.85) ----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 120 110
Conduction Angle
130 120 110
Conduction Period
IRK.F152.. Series R thJC (DC) = 0.17 K/W
IRK.F152.. Series R thJC(DC) = 0.17 K/W
100 90 30 80 70 0 20 40 60 80 100 120 140 160 Average On-state Current (A) 60 90 120 180
100 90 80 70 0 50 100 150 200 250 Average On-state Current (A) 30 60 90 120 180 DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Average On-state Current (A)
Conduction Angle
280 240 200 160 DC 180 120 90 60 30
180 120 90 60 30 RMS Limit
120 RMS Limit
Conduction Period
80 40 0 0 50 100 150 200 250 Average On-state Current (A) IRK.F152.. Series Per Junction T J = 125C
IRK.F152.. Series Per Junction T J= 125C
Fig. 3 - On-state Power Loss Characteristics
4000
4600 4200 3800 3400 3000 2600 2200
Fig. 4 - On-state Power Loss Characteristics
3500
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sin e Wave On-stat e Current (A)
Peak Half Sine Wave On-state Current (A)
3000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated VRRMReapplied
2500
2000 IRK.F152.. Series Per Junction 1500 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
IRK.F152.. Series Per Junction 0.1
Pulse Train Duration (s)
1800 0.01
1
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A) IRK.F152.. Series Per Junction
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Value R thJC = 0.17 K/W (DC Operation) 0.1
1000 T J= 25C T J = 125C
Transient Thermal Impedance Z thJC (K/W)
0.01 IRK.F152.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100
100 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
6
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) 250 IRK.F152.. Series T J = 125 C 200
I TM = 500 A 300 A 200 A
150 130 110 90 70 50 30 10 10 IRK.F152.. Series T J = 125 C
I TM = 500 A 300 A 200 A 100 A 50 A
150
100 A
100
50 A
50
0 10
20
30
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
50 Hz 150 400
50 Hz 150 400 1000 2500 5000
1E3
5000
1000 2500
tp
IRK.F152.. Series Sinusoidal Pulse T C = 90 C
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
tp
IRK.F152.. Series Sinusoidal Pulse T C = 60 C
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F152.. Series Trapezoidal Pulse T C= 90 C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D= 80% V DRM
Peak On-state Current (A)
tp
tp
IRK.F152.. Series Trapezoidal Pulse T C= 90 C, di/dt 100A/s
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% V DRM
50 Hz
50 Hz
1E3
1000 2500
5000
150 400
150 400 1000 2500 5000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
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IRK.F152.. Series
Bulletin I27093 rev. A 09/97
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM 50 Hz 150
Peak On-state Current (A)
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM 150 400 1000 2500
5000
50 Hz
1E3
2500 5000
400
1000
tp
IRK.F152.. Series Trapezoidal Pulse T C = 60 C, di/dt 50A/s
tp
IRK.F152.. Series Trapezoidal Pulse T C = 60 C, di/dt 100A/s
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E5
Peak On-st ate Current (A)
1E4
2.5 5 10 joules per pulse
0.5 1 2.5 10 joules per pulse 5
1E3
0.05 0.01
0.1
0.25
0.5
1
0.1 0.05
0.25
1E2
IRK.F152.. Series Sinusoidal pulse
tp
IRK.F152..Series Trapezoidal Pulse di/dt 50A/s
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s 10 (a) (b)
Tj=-40 C Tj=25 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W,
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
Tj=125 C
1 VGD IGD 0.1 0.01
(1)
(2)
(3) (4)
IRK.F152.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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