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| PD - 94381 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGS6B60KD IRGSL6B60KD VCES = 600V VCE(on) typ. = 1.8V Features * Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. G E @ VGE = 15V, Benefits * Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation. n-ch an nel ICE = 5.0A, Tj=25C D2Pak IRGS6B60KD TO-262 IRGSL6B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 7.0 26 26 13 7.0 26 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) A s A V W C Thermal Resistance Parameter RJC RJC RCS RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight Min. --- --- --- --- --- --- Typ. --- --- 0.50 --- --- 1.44 Max. 1.4 4.4 --- 62 40 --- Units C/W g www.irf.com 1 4/19/02 IRGS/SL6B60KD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage gfe ICES VFM IGES Min. 600 --- 1.5 --- Gate Threshold Voltage 3.5 Temperature Coeff. of Threshold Voltage --- Forward Transconductance --- Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.3 1.80 2.20 4.5 -10 3.0 1.0 200 1.25 1.20 --- Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-150C) 2.00 IC = 5.0A, VGE = 15V 2.45 V IC = 5.0A,VGE = 15V, TJ = 150C 5.5 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-150C) --- S VCE = 50V, IC = 5.0A, PW=80s 20 A VGE = 0V, VCE = 600V 500 VGE = 0V, VCE = 600V, TJ = 150C 1.45 IC = 5.0A 1.40 V IC = 5.0A TJ = 150C 100 nA VGE = 20V Ref.Fig. 5, 6,7 9, 10,11 9,10,11 8 Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Reverse Recovery energy of the diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Ref.Fig. Max. Units Conditions --- IC = 5.0A --- nC VCC = 400V CT1 --- VGE = 15V CT4 210 J IC = 5.0A, VCC = 400V 245 VGE = 15V,R G = 100, L =1.4mH 455 Ls = 150nH TJ = 25C Q CT4 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100 L =1.4mH 230 ns Ls = 150nH, TJ = 25C 22 CT4 260 IC = 5.0A, VCC = 400V 13,15 300 J VGE = 15V,R G = 100, L =1.4mH WF1WF2 560 Ls = 150nH TJ = 150C Q 14, 16 37 IC = 5.0A, VCC = 400V CT4 26 VGE = 15V, RG = 100 L =1.4mH 255 ns Ls = 150nH, TJ = 150C WF1 27 WF2 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz 4 TJ = 150C, IC = 26A, Vp =600V FULL SQUARE VCC = 500V, VGE = +15V to 0V,RG = 100 CT2 CT3 s TJ = 150C, Vp =600V, RG = 100 10 --- --- WF4 VCC = 360V, VGE = +15V to 0V 17,18,19 --- 90 175 J TJ = 150C 20, 21 --- 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH CT4,WF3 --- 10 14 A VGE = 15V,RG = 100, Ls = 150nH Typ. 18.2 1.9 9.2 110 135 245 25 17 215 13.2 150 190 340 28 17 240 18 290 34 10 Q Energy losses include "tail" and diode reverse recovery. 2 www.irf.com IRGS/SL6B60KD 15 100 90 80 10 70 Ptot (W) 5 0 0 20 40 60 80 100 120 140 160 T C (C) 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (C) IC (A) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 s 10 IC (A) 1 100 s DC 1ms 0.1 1 10 100 VCE (V) 1000 10000 IC A) 1 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25C; TJ 150C Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V www.irf.com 3 IRGS/SL6B60KD 20 18 16 14 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 20 18 16 14 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V ICE (A) 10 8 6 4 2 0 0 1 2 3 VCE (V) 4 5 6 ICE (A) 12 12 10 8 6 4 2 0 0 1 2 3 VCE (V) 4 5 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 20 18 16 14 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 30 25 20 -40C 25C 150C ICE (A) 12 10 8 6 4 IF (A) 0 1 2 3 VCE (V) 4 5 6 15 10 5 2 0 0 0.0 0.5 1.0 VF (V) 1.5 2.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 4 www.irf.com IRGS/SL6B60KD 20 18 16 14 20 18 16 14 10 8 6 4 2 0 5 10 VGE (V) ICE = 5.0A ICE = 10A VCE (V) VCE (V) 12 ICE = 3.0A 12 10 8 6 4 2 0 ICE = 3.0A ICE = 5.0A ICE = 10A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 18 16 14 40 35 30 ICE = 3.0A ICE = 5.0A ICE = 10A T J = 25C T J = 150C VCE (V) 10 8 6 4 2 0 5 10 VGE (V) ICE (A) 12 25 20 15 10 5 T J = 150C TJ = 25C 0 5 10 VGE (V) 15 20 15 20 0 Fig. 11 - Typical VCE vs. VGE TJ = 150C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s www.irf.com 5 IRGS/SL6B60KD 700 600 500 EON 1000 tdOFF Swiching Time (ns) 100 Energy (J) 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tR tdON tF 10 1 0 5 10 15 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE= 15V 250 1000 200 EOFF tdOFF Swiching Time (ns) 100 Energy (J) 150 EON 100 tdON tR 10 tF 50 0 0 50 100 150 200 1 0 50 100 150 200 RG ( ) RG ( ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V 6 www.irf.com IRGS/SL6B60KD 25 20 R G = 22 20 16 R G = 47 IRR (A) R G = 100 10 IRR (A) 15 12 8 R G = 150 5 4 0 0 5 10 15 20 0 0 50 100 150 200 IF (A) RG ( Fig. 17 - Typical Diode IRR vs. IF TJ = 150C Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 5.0A 20 1200 1000 800 47 100 600 400 200 0 0 200 400 600 800 1000 22 10A 16 IRR (A) 12 Q RR (C) 150 5.0A 3.0A 8 4 0 0 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 5.0A; TJ = 150C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C www.irf.com 7 IRGS/SL6B60KD 300 22 250 Energy (J) 200 47 150 100 100 150 50 0 5 10 15 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150C 1000 16 Cies 14 300V 12 400V Capacitance (pF) 100 10 Coes VGE (V) 8 6 4 2 0 Cres 10 1 1 10 100 0 VCE (V) 5 10 15 20 Q G , Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600H 8 www.irf.com IRGS/SL6B60KD 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.01 0.02 R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 0.1 J Ri (C/W) i (sec) 0.472 0.00022 0.298 0.146 0.00089 0.01037 1 2 Ci= i/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.01 0.02 J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 0.1 1 2 Ri (C/W) i (sec) 0.796 0.000172 1.616 0.001517 0.502 0.080325 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGS/SL6B60KD L L VC C DUT 0 80 V + DUT 480V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diod e cla mp / DUT L Driver D C 360V - 5V DUT / D R IV ER Rg DUT V CC Fig.C.T.3 - S.C.SOA Circuit R= Fig.C.T.4 - Switching Loss Circuit VC C IC M DU T Rg VC C Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGS/SL6B60KD 450 400 350 300 250 90% ICE 9 8 7 6 5 500 25 400 20 300 TEST CURRENT 15 ICE (A) 200 150 100 50 0 -50 -0.20 Eof f Loss 5% V CE 5% ICE 4 3 2 1 200 90% test current 10 100 tr 0 10% test current 5% V CE 5 0 Eon Loss 0 -1 0.80 0.30 -100 16.00 16.10 16.20 16.30 -5 16.40 time(s) time (s) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4 50 0 -50 -100 -150 QRR t RR 8 6 4 2 0 VCE (V) 500 50 400 V CE 300 ICE 40 30 VF (V) -200 -250 -300 -350 -400 -450 -0.06 Peak IRR 10% Peak IRR -2 -4 -6 -8 -10 -12 0.04 0.14 0.24 200 20 100 10 0 -5.00 0.00 5.00 10.00 0 15.00 time (S) time (S) Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform @ TJ = 150C using Fig. CT.3 www.irf.com ICE (A) IF (A) 11 ICE (A) tf VCE (V) VCE (V) IRGS/SL6B60KD D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L 12 www.irf.com IRGS/SL6B60KD TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 13 IRGS/SL6B60KD D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.1 6 1 ) 3.9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 1 3 .5 0 ( .5 3 2 ) 1 2 .8 0 ( .5 0 4 ) 2 7 .4 0 (1 .0 7 9 ) 2 3 .9 0 (.9 4 1 ) 4 330.00 (14.173) MA X . 6 0 .0 0 (2 .3 6 2) M IN . N O TE S : 1 . C O M F O R M S T O EIA -4 1 8 . 2 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET ER . 3 . D IM E NS IO N M EA SU R E D @ H U B. 4 . IN C L U D ES F L AN G E D IST O R T IO N @ O U T ER ED G E. 26.40 (1.039) 24.40 (.961) 3 3 0 .4 0 (1 .1 9 7 ) M A X. 4 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/02 14 www.irf.com |
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