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| PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) 4.6V @VGE = 15V, I C = 4.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 6.9 4.5 14 14 10 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 2.1 -- 40 -- Units C/W g (oz) C-463 Revision 1 IRGPH20M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.3 -- V/C VGE = 0V, I C = 1.0mA -- 3.1 4.6 IC = 4.5A V GE = 15V -- 3.9 -- V IC = 6.9A See Fig. 2, 5 -- 4.0 -- IC = 4.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.3 2.6 -- S VCE = 100V, I C = 4.5A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 24 IC = 4.5A 4.4 7.0 nC VCC = 400V See Fig. 8 5.5 8.3 VGE = 15V 26 -- TJ = 25C 13 -- ns IC = 4.5A, V CC = 960V 43 65 VGE = 15V, R G = 50 430 640 Energy losses include "tail" 0.33 -- 0.78 -- mJ See Fig. 9, 10, 11, 14 1.1 1.7 -- -- s VCC = 720V, T J = 125C VGE = 15V, R G = 50, VCPK < 1000V 32 -- TJ = 150C, 20 -- ns IC = 4.5A, V CC = 960V 480 -- VGE = 15V, R G = 50 450 -- Energy losses include "tail" 2.4 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 340 -- VGE = 0V 25 -- pF VCC = 30V See Fig. 7 4.7 -- = 1.0MHz C-464 IRGPH20M 12 F o r b o th : T ria n g u la r w a v e : 9 Load Current (A) D uty c y cle: 50% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 1 5 W S q u a re w a v e : C la m p v o lta g e : 8 0 % o f ra te d 6 6 0 % o f ra te d v o lta g e 3 Id ea l d io d e s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 10 T = 25C J TJ = 150C TJ = 25C TJ = 150C 10 1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-465 IRGPH20M 8 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 15 VGE = 15V 80s PULSE WIDTH 12 6 I C = 9.0A 9 4 6 I C = 4.5A 3 2 IC = 2.3A 0 -60 -40 -20 0 20 40 60 80 0 25 50 75 100 125 A 150 A 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-466 IRGPH20M 600 500 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 4.5A 16 C, Capacitance (pF) Cies 400 12 300 Coes 200 8 100 Cres 4 0 1 10 0 0 4 8 12 16 A 20 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.10 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC = 960V = 15V = 25C = 4.5A 10 RG = 50 V GE = 15V V CC = 960V I C = 9.0A I C = 4.5A I C = 2.3A 1 1.08 1.06 1.04 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-467 IRGPH20M 6.0 Total Switching Losses (mJ) 5.0 IC , Collector-to-Emitter Current (A) RG TC V CC V GE = 50 = 150C = 960V = 15V 100 VGE = 20V TJ = 125C 10 4.0 SAFE OPERATING AREA 1 3.0 2.0 0.1 1.0 0.0 0 2 4 6 8 A 10 0 1 10 100 1000 A 10000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13 C-468 |
Price & Availability of 2004
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