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ADE-208-179A(Z)
1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch
Rev. 1 Nov. 1994 Features
* Low forward resistance. (rf = 0.9 max) * Suitable for 5mm pitch high speed automatical insertion. * Small glass package (MHD) enables easy mounting and high reliability.
Outline
1 Cathode band
2
Ordering Information
Type No. 1SS110 Cathode band Verdure Package Code MHD
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Forward current Power dissipation Operation temperature Storage temperature Symbol VR IF Pd Topr Tstg Value 35 100 15 0 -20 to + 60 -55 to +150 Unit V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol Min VF VR IR C rf -- 35 -- -- -- Typ -- -- -- -- -- Max 1.0 -- 0.1 1.2 0.9 Unit V V A pF Test Condition IF = 10 mA IR = 10 A VR = 25 V VR = 6 V , f = 1 MHz IF = 2 mA , f = 100 MHz
1SS110
-2
10
10 f=1MHz
10 Forward current I F (A)
-4
10-6
Capacitance C (pF) 0.6 0.8
1.0
10
-8
10
-10
10
-12
10 0 0.2 0.4 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
-1
1.0
10 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage
40
10
2
f=100MHz
Forward resistance r f ( )
10
1.0
10
-1
10
-2
10-4
10-3
10-2
10
-1
Forward current I F (A) Fig.3 Forward resistance Vs. Forward current
1SS110
Package Dimensions
Unit: mm
26.0 Min
2.4 Max
26.0 Min 2.0 Max
1 Cathode 0.4 1 2 Cathode band (Verdure) HITACHI Code JEDEC Code EIAJ Code Weight (g) MHD DO-34 -- 0.084 2 Anode

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