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| GaAs SPST Switch DC-6 GHz Features * Low Insertion Loss,0.6 dB Typical @ 1 GHz * Fast Switching Speed,10 ns Typical * Ultra Low DC Power Consumption * Integral Static Protection MASW6020G V 2.00 Guaranteed Specifications** @25C*** Frequency Range Insertion Loss (L) Low Loss DC-1.0 GHz 0.8 dB DC-2.0 GHz 0.9 dB DC-6.0 GHz 2.5 dB Isolation (L) Low Loss DC-1.0 GHz 30 dB DC-2.0 GHz 22 dB DC-6.0 GHz 11 dB VSWR (L) Low Loss DC-1.0 GHz 1.1:1 DC-2.0 GHz 1.3:1 DC-6.0 GHz 2.0:1 Low Loss Matched 1.0 dB 1.1 dB 2.7 dB Low Loss Matched 63 dB 46 dB 14 dB Low Loss Matched 1.1:1 1.2:1 2.7:1 DC - 6000 MHz (H) High Isolation 0.9 dB 1.0 dB 2.5 dB (H) High Isolation 64 dB 52 dB 19 dB (H) High Isolation 1.1:1 1.1:1 2.0:1 Typical Performance Operating Characteristics Impedance Switching Characteristics Trise, Tfall (10%/90% or 90%/10% RF) Ton, Toff (50% CTL to 90%/10% RF) Transients (In-Band) Input Power for 1 dB Compression Control Voltages (VDC) Above 500 MHz 100 MHz 0/-5 +27 dBm +21 dBm 50 Nominal 10 ns Typ 10 ns Typ 10 mV Typ 0/-8 +33 dBm Typ +26 dBm Typ Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP3 Above 500 MHz 100 MHz +68 dBm +62 dBm +46 dBm Typ +40 dBm Typ Control Voltages (Complementary Logic) Vin Low 0 to -0.2V @ 20 A Max Vin Hi -5V @ 50 A Typ to -8V @ 300 A Max Die Size 0.031" x 0.051" x 0.010" (0.80 mm x 01.30 mm x 0.25 mm) * Equivalent to Microelectronics Division (ANZAC) SW210H ** All specifications apply with 50 impedance connected to all RF ports, 0 and -8 VDC control voltages. *** Loss change 0.0025 dB/C. (From -55C to +85C) Schematic Handling, Mounting, and Bonding Procedure Handling Precautions Permanent damage to the MASW6020G may occur if the following precautions are not adhered to: A. Cleanliness - The MASW6020G should be handled in a clean environment. DO NOT attempt to clean unit after the MASW6020G is installed. B. Static Sensitivity - All chip handling equipment and personnel should be DC grounded. C. Transient - Avoid instrument and power supply transients while bias is applied to the MASW6020G. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias - Apply voltage to either control port A/B or only when the other is grounded. Neither port should be allowed to "float." E. General Handling - It is recommended that the MASW6020G chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. MASW6020G V 2.00 Truth Table Option Control Voltage A B V Low V Hi V Low V Hi V Low V Hi on off V Hi V Low V Hi V Low V Hi V Low Switch Condition & Bonding Ground Bonds RF1 on off RF2 on off on off on off on off ALT GND1 GND2 Term G G G G G G G G G G G G T L H Maximum Ratings Control Voltage (A/B): Max Input RF Power: -8.5 VDC +34 dBm (500 MHz - 4 GHz) -65C to +175C +175C Storage Temperature: Maximum Operating Temperature: Mounting The MASW6020G is back-metallized with Pd/Ni/Au (100/1,000/ 30,000A) metallization. It can be die-mounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255C and a tool temperature of 265C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290C. B. DO NOT expose the MASW6020G to a temperature greater than 320C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Electrically conductive epoxy must be used. B. Apply a minimum amount of epoxy and place the MASW6020G into position. A thin epoxy fillet should be visible around the perimeter of the chip. C. Cure epoxy per manufacturer's recommended schedule. Bond Pad Dimensions - Inches (mm) RF1, RF2: Alt RF: A,B: GND1: GND2 : Term: 0.004 x 0.006 (0.100 x 0.150) 0.004 x 0.005 (0.100 x 0.125) 0.004 x 0.004 (0.100 x 0.100) 0.012 x 0.007 (0.300 x 0.175) 0.009 x 0.008 (0.225 x 0.200) 0.004 x 0.008 (0.100 x 0.200) Bond Pad Layout Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. |
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