View 2SK4082_952859.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
* Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 1.8 A) * Low gate charge QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A) * Gate voltage rating: 30 V * Avalanche capability ratings
(Isolated TO-220)
ORDERING INFORMATION
PART NUMBER 2SK4082-S17-AY
Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 50 p/tube
PACKAGE Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 3.5 14 35 2.0 150 -55 to +150 2 240
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18786EJ1V0DS00 (1st edition) Date Published June 2007 NS Printed in Japan
2007
2SK4082
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.8 A VGS = 10 V, ID = 1.8 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 1.8 A, VGS = 10 V, RG = 10
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
2.5 0.8
3.0
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
1.7 550 250 49 13 10 26 21
2.2
pF pF pF ns ns ns ns nC nC nC
VDD = 450 V, VGS = 10 V, ID = 3.5 A IF = 3.5 A, VGS = 0 V IF = 3.5 A, VGS = 0 V, di/dt = 100 A/s
13 4.3 5.2 0.87 220 840 1.5
VF(S-D) trr Qrr
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS RG
Wave Form
50
0
10%
VGS
90%
VDD VDS
90% 90% 10% 10%
IAS ID VDD
VDS
0
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D18786EJ1V0DS
2SK4082
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150
PT - Total Power Dissipation - W
35 30 25 20 15 10 5 0 0 25 50 75 100 125 150
Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C DRAIN CURRENT vs. CASE TEMPERATURE
100
ID(pulse)
4
PW
3.5
=1
i
10
ID - Drain Current - A
1 0.1 0.01 0.001
d it e im ) )L V on S( 1i 0 RD S = G (V
ID - Drain Current - A
ID(DC)
1i m
i
00
s
3 2.5 2 1.5 1 0.5 0
s
1i 0 m
i
w Po D er p si is io at n d it e m Li
s
TC = 25C Single Pulse
0.1
1
10
100
1000
0
25
50
75
100
125
150
VDS - Drain to Source Voltage - V
TC - Case Temperature - C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 62.5C/Wi 10
Rth(ch-C) = 3.57C/Wi 1
0.1
Single Pulse 0.01
100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Data Sheet D18786EJ1V0DS
3
2SK4082
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
6 5
ID - Drain Current - A ID - Drain Current - A
10 VDS = 10 V Pulsed
VGS = 20 V 4 3 2 1 Pulsed 0 0 2 4 6 8 10
VDS - Drain to Source Voltage - V
1 Tch = -55C -40C -25C 25C 75C 125C 150C 0 4 8 12 16 20
10 V
0.1
0.01
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
6 5 4 3 2 1 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C
10 VDS = 10 V Pulsed 1 Tch = -55C -40C -25C 25C 75C 125C 150C 0.1
VDS = 10 V ID = 1 mA
0.01 0.01
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
6 5 4 3 2 1 Pulsed 0 0 5 10 15 20
VGS - Gate to Source Voltage - V
6 5 4 3 2 1 0 0.01 VGS = 10 V 20 V Pulsed 0.1 1 10 100
ID = 3.5 A 1.8 A
ID - Drain Current - A
4
Data Sheet D18786EJ1V0DS
2SK4082
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance -
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
6 5 4 3 2 1 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF
10000 VGS = 10 V Pulsed ID = 3.5 A
1000
Ciss
100 Coss 10 VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000
VDS - Drain to Source Voltage - V
1.8 A
Crss
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600 12 10 8 VGS 6 4 VDS ID = 3.5 A 0 0 0 2 4 6 8 10 12 14 2
td(on), tr, td(off), tf - Switching Time - ns
VDS - Drain to Source Voltage - V
500 400 300 200 100
tf 100 td(off) td(on) 10 tr
1 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
IF - Diode Forward Current - A trr - Reverse Recovery Time - ns
1000
10 VGS = 10 V
1
100
0.1
0V
Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
di/dt = 100 A/s VGS = 0 V 10 0.1 1 10 100
IF - Diode Forward Current - A
Data Sheet D18786EJ1V0DS
5
VGS - Gate to Source Voltage - V
VDD = 150 V VGS = 10 V RG = 10
VDD = 450 V 300 V 150 V
2SK4082
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
10 120
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 150 V RG = 25 VGS = 20 0 V IAS 2 A
IAS - Single Avalanche Current - A
IAS = 2 A
Energy Derating Factor - %
100 80 60 40 20 0
1 VDD = 150 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 0.01 0.1 1
EAS = 240 mJ
10
100
1000
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Isolated TO-220 (MP-45F)
10.00.3
4.70.2 3.20.2 2.540.2
Gate
Drain
Body Diode
15.870.3
3.300.20
Source
1.47 MAX
3.0 TYP.
13.5 MAX.
0.80.2 2.54 TYP. 2.54 TYP.
2.760.2 0.500.1
1. Gate 2. Drain 3. Source 123
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18786EJ1V0DS
2SK4082
* The information in this document is current as of June, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

▲Up To Search▲

Price & Availability of 2SK4082

	To Download 2SK4082 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .