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| Preliminary DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0913A L & S BAND GaAs FET [ SMD non - matched ] FEATURES * High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm * High power gain Gp=13dB(TYP.) @f=1.9GHz * High power added efficiency add=48%(TYP.) @f=1.9GHz,Pin=18dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers Fig.1 QUALITY * GG RECOMMENDED BIAS CONDITIONS * Vds=10V * Ids=200mA * Rg=500 Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg (Ta=25C) Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 800 -2.5 5.4 5.0 175 -65 to +175 Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(off) gm Po add GLP NF Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=2.5mA VDS=3V,ID=300mA VDS=10V,ID=200mA,f=1.9GHz Pin=18dBm VDS=10V,ID=200mA,f=1.9GHz Vf Method 400 -1 29.5 - Limits Typ. 550 -3 200 31 48 13 2.0 20 Max. 800 -5 30 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric Apr. 1999 MGF0913A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 35 70 30 25 Gp(dB) ,Po(dBm) 20 Vds=10V Ids(off)=200mA f=1.9GHz 60 Po 50 40 PAE 15 Gp 30 10 20 5 10 0 0 5 10 15 20 25 P in(dBm) 0 IM3,Po(SCL) vs. Pi(SCL) 40 30 20 10 VD=10V ID=200mA f1=1.90GHz f2=1.91GHz 0 Po -10 -20 -30 -40 Po(SCL) (dBm) 10 0 -10 -20 -30 -40 -50 -15 -10 -5 0 5 10 15 20 IM3 -50 -60 -70 -80 Pi(SCL) (dBm) Mitsubishi Electric IM3 (dBc) PAE(%) Apr. 1999 MGF0913A 60 50 40 30 20 10 Po(dBm) 0 -10 -20 -30 -40 -50 -60 -70 -10 0 10 20 Pin(dBm) 30 40 50 -70 -50 -30 -10 10 IM3(dBc) VD=10V ID=200mA f1=1.90GHz f2=1.91GHz 50 30 Mitsubishi Electric Apr. 1999 MGF0913A S PARAMETERS (Ta=25C, VDS=10V, ID=200mA) f (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 Mag. 0.877 0.840 0.811 0.787 0.768 0.753 0.741 0.731 0.721 0.712 0.703 0.693 0.681 0.668 0.652 0.635 0.615 0.594 0.570 0.544 0.517 0.489 0.461 0.433 0.406 0.381 0.359 0.342 0.330 0.326 0.330 0.344 0.371 0.412 S11 Ang.(deg) -70.93 -94.65 -112.00 -124.84 -134.60 -142.31 -148.73 -154.32 -159.34 -163.92 -168.07 -171.78 -175.06 -177.98 178.67 174.86 170.91 166.85 162.63 158.16 153.27 147.80 141.57 134.43 126.24 116.93 106.48 94.96 82.57 69.59 56.49 43.86 32.50 23.38 Mag. 8.518 7.125 6.000 5.100 4.387 3.827 3.390 3.051 2.789 2.585 2.424 2.294 2.185 2.090 2.005 1.926 1.851 1.779 1.712 1.651 1.596 1.549 1.513 1.488 1.474 1.472 1.478 1.489 1.500 1.505 1.491 1.449 1.361 1.209 S21 Ang.(deg) 131.12 117.76 106.38 96.63 88.19 80.79 74.20 68.20 62.63 57.35 52.23 47.19 42.16 37.08 31.92 26.67 21.31 15.85 10.30 4.66 -1.03 -6.78 -12.55 -18.35 -24.17 -30.02 -35.93 -41.92 -48.05 -54.39 -61.04 -68.11 -75.75 -84.13 Mag. 0.035 0.037 0.039 0.042 0.044 0.047 0.049 0.052 0.055 0.058 0.061 0.065 0.068 0.073 0.077 0.082 0.087 0.093 0.099 0.106 0.113 0.121 0.130 0.138 0.148 0.158 0.168 0.179 0.190 0.201 0.213 0.225 0.236 0.248 S12 Ang.(deg) 54.73 48.76 44.36 41.21 39.04 37.59 36.67 36.08 35.66 35.30 34.88 34.32 33.56 32.54 31.24 29.64 27.73 25.51 23.01 20.22 17.18 13.89 10.39 6.69 2.81 -1.26 -5.51 -9.96 -14.64 -19.58 -24.84 -30.51 -36.68 -43.46 Mag. 0.181 0.198 0.215 0.230 0.246 0.261 0.276 0.291 0.306 0.321 0.336 0.352 0.367 0.382 0.397 0.411 0.426 0.439 0.452 0.464 0.474 0.483 0.491 0.496 0.499 0.499 0.496 0.490 0.480 0.466 0.447 0.424 0.395 0.360 S22 Ang.(deg) -86.21 -97.60 -105.58 -110.87 -114.10 -115.81 -116.47 -116.45 -116.07 -115.59 -115.18 -114.99 -115.11 -115.59 -116.44 -117.66 -119.19 -120.98 -122.98 -125.10 -127.26 -129.41 -131.48 -133.44 -135.26 -136.96 -138.59 -140.24 -142.04 -144.18 -146.90 -150.51 -155.39 -162.00 K 0.53 0.62 0.71 0.81 0.92 1.02 1.12 1.21 1.28 1.34 1.39 1.44 1.47 1.50 1.53 1.56 1.60 1.63 1.65 1.68 1.69 1.70 1.70 1.69 1.67 1.63 1.59 1.55 1.50 1.46 1.43 1.41 1.42 1.48 MSG/MAG (dB) 23.91 22.84 21.82 20.85 19.95 18.15 16.23 14.91 13.86 12.99 12.24 11.58 10.98 10.41 9.86 9.30 8.74 8.18 7.64 7.12 6.63 6.18 5.79 5.47 5.22 5.04 4.92 4.85 4.79 4.72 4.58 4.29 3.76 2.79 Mitsubishi Electric Apr. 1999 |
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