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Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche q Low q No Unit : mm
8.50.2 3.40.3 1.00.1
energy capability guaranteed
6.00.5
ON-resistance
10.00.3
secondary breakdown drive
1.50.1
q Low-voltage
s Applications
10.5min.
1.5max.
2.0
1.1max.
q Non-contact q Solenoid q Motor
relay
drive
0.80.1
0.5max.
drive equipment mode regulator
2.540.3 5.080.5 1 2 3
q Control
q Switching
s Absolute Maximum Ratings (Tc = 25C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25C Ta= 25C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 8010 15 10 20 62.5 30 1.3 150 -55 to +150 Unit V V A A mJ W C C
S G
1 : Gate 2 : Collector 3 : Emitter N Type Package
s Equivalent Circuit
D
Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature
* L= 5mH, IL= 5A, 1 pulse
s Electrical Characteristics (Tc = 25C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Reverse recovery time Reverse recovery charge Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF trr Qrr Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) VDD= 30V, ID= 5A VGS=10V, R L= 6 VDS=10V, VGS= 0, f= 1MHz Condition VDS= 70V, VGS= 0 VDS= 0, VGS=15V ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, I D= 5A VGS= 4V, ID= 5A VDS=10V, ID= 5A IDR=10A, VGS= 0 L=230 H, VDD= 30V, VGS = 0 IDR=10A, di/dt= 80A/ s 0.55 2.2 85 250 20 0.5 0.9 1.9 4.2 96 3 70 1 150 230 5.5 -1.8 Min Typ Max 10 10 90 2.5 230 370 Unit A A V V m m S V s s pF pF pF s s s C/W C/W
Power F-MOS FETs
2SK2339
Area of safe operation (ASO)
100 Non repetitive pulse TC=25C
60
PD - Ta
(1) TC=Ta (2) Without heat sink (PD=1.3W) (A)
IAS - L-load
100 TC=25C 50 30 20 10 62.5mJ 5 3 2 1 0.5 0.3 0.2
30
IDP
t=100ms t=1ms
Drain current ID (A)
3
t=10ms t=100ms
30 (1)
DC
1
20
0.3
10 (2)
0.1 1 3 5 10 30 50 100 Drain-Source voltage VDS (V)
0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
Abalanche current
IAS
10
ID
Allowable power dissipation PD (W)
50
40
0.1 0.1
0.3 0.5 L-load
1 L (mH)
3
5
10
ID -VDS
14 VGS=10V 5V 4.5V
ID (A)
ID - VGS
18
Vth - TC
6
TC=25C
Ta=25C
16
VDS=10V ID=1mA 5
Gate threshold voltage Vth (V)
12
14
ID (A)
10
12 10 8 6 4
4
8 4V 6 3.5V PD=30W 2 3V
Drain current
Drain current
3
2
4
1
2 0
0 0 2 4 6 8 VDS 10 (V) 12 Drain-Source voltage
0
0 2 4 6 8 10
0
25
50
75
100
125
150
Gate-Source voltage VGS (V)
Case temperature TC (C)
RDS(on) - ID
600
(m)
RDS(on) - VGS
600 TC=25C
(S)
| Yfs | - ID
7 VDS=10V Ta=25C 6
Drain-Source ON-resistance RDS(on) ()
500
(1)VGS=4V (2)VGS=10V TC=25C
500 ID=2.5A 400 ID=5A
RDS (on)
| Yfs | Forward transadmittance
5
400
300 (1) 200 (2) 100
Drain-Source ON-resistance
4
300
3
200
2
100
1
0 0 2 4 6 8 10 12 Drain current ID (A)
0 0 2 4 6 VGS 8 (V) 10 Gate-Source voltage
0 0 2 4 6 8 10 12 Drain current ID (A)
Power F-MOS FETs
2SK2339
Ciss, Coss, Crss - VDS
Input capacitance, Output capacitance, Ciss, Coss, Crss (pF) Feedback capacitance
2000 1000 500
Switching time t (ms)
td(off), tr, ton - ID
3.0 VDD=30V VGS=10V TC=25C
Drain-Source voltage VDS (V)
VDS, VGS - Qg
14 ID=10A Ta=20C 60 VDS VDS=30V VDS=40V VDS=50V VGS 12
Gate-Source voltage VGS (V)
f=1MHz TC=25C
2.5
50
10
200 100 50 Coss Ciss
2.0 td(off) 1.5
40
8
30
6
1.0
tf
20 Crss 10 5 0 20 40 60 80 100 0.5 ton
20
4
10
2
0 0 2 4 6 8 ID (A) 10 12 Drain-Source voltage VDS (V) Drain current
0 0 5 10 15 20 25 Gate charge amount Qg (nc)
0
ISD - VSD
20 10
Rth - tP
1000
VGS=0 TC=25C
Thermal resistance Rth (C/W)
Souce-Drain current ISD (A)
5 3 2 1 0.5 0.3 0.2 0.1 0.05 0 0.5 1.0 1.5 2.0 Diode forward voltage VSD (V)
Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 50 x 50 x 2mm Al heat sink 100
(1)
(2) 10
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Pulse width tP (s)
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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