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Power Transistors
2SB1416
Silicon PNP epitaxial planar type
Unit: mm
3.80.2
For low-frequency power amplification Complementary to 2SD2136 I Features
* High forward current transfer ratio hFE which has satisfactory linearity * Low collector to emitter saturation voltage VCE(sat) * Allowing automatic insertion with radial taping
10.80.2
7.50.2
4.50.2
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
0.8 C
16.01.0
0.70.1 0.70.1 1.150.2 1.150.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating -60 -60 -5 -5 -3 1.5 150 -55 to +150
Unit V V V A A W C C
0.8 C
1
2
3
2.50.2
2.50.2
1 : Emitter 2 : Collector 3 : Base MT-3 (MT3 Type Package)
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Symbol ICES ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 * hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE1 P 40 to 90 Q 70 to 150 R 120 to 250 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCE = -60 V, VBE = 0 VCE = -30 V, IB = 0 VEB = -5 V, IC = 0 IC = -30 mA, IB = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A IC = -3 A, IB = - 0.375 A VCE = -4 V, IC = -3 A VCB = -5 V, IE = 0.1 A, f = 200 MHz IC = -1 A, IB1 = - 0.1 A, IB2 = 0.1 A 0.5 1.2 0.3 -60 40 10 -1.8 -1.2 270 V V MHz s s s 250 Min Typ Max -200 -300 -1 Unit A A mA V
2.050.2
I Absolute Maximum Ratings TC = 25C
0.50.1
0.40.1
1
2SB1416
PC T a
2.0 Without heat sink 1.2 Ta=25C 1.0 IB=-8mA
Power Transistors
IC VCE
120 VCE=-4V 25C 100
IC VBE
Collector power dissipation PC (W)
Collector current IC (A)
-7mA 0.8 -6mA 0.6 -5mA -4mA 0.4 -3mA -2mA 0.2 -1mA
Collector current IC (A)
1.6
Ta=75C 80
-25C
1.2
60
0.8
40
0.4
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
10 IC/IB=8 240
hFE IC
300 VCE=-4V
fT I C
VCB=-5V f=200MHz TC=25C
Forward current transfer ratio hFE
200
Transition frequency fT (MHz)
1000
Ta=75C
250
1
160
25C
200
0.1 Ta=75C Ta=25C Ta=-25C 0.01
120
-25C
150
80
100
40
50
0.001 1 10 100 1000
0 1 10 100
0 -0.01 -0.03 -0.1 -0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (mA)
Collector current IC (A)
Area of safe operation (ASO)
-100 -30 Single pulse TC=25C 104
Rth(t) t
Without heat sink
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
103
-10 ICP -3 -1 DC -0.3 -0.1 IC t=10ms t=1ms
102
10
1
-0.03 -0.01 -0.1 -0.3
-1
-3
-10
-30
-100
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
2
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2001 MAR

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