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| STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53 - 10A - TO-220 /TO-220FP Zener-protected SuperMESHTM Power MOSFET Features Type STP12NK60Z STF12NK60Z VDSS (@Tjmax) 650V 650V RDS(on) ID PW <0.640 10A 150W <0.640 10A 35W 3 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 3 1 2 1 2 TO-220FP TO-220 Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Internal schematic diagram Application Switching application Order codes Part number STP12NK60Z STF12NK60Z Marking P12NK60Z F12NK60Z Package TO-220 TO-220FP Packaging Tube Tube April 2007 Rev 5 1/14 www.st.com 14 Contents STP12NK60Z - STF12NK60Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP12NK60Z - STF12NK60Z Electrical ratings 1 Electrical ratings (TCASE=25C unless otherwise specified) Table 1. Symbol VDS VGS ID ID IDM (2) PTOT Absolute maximum ratings Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 10 6.3 40 150 1.2 -15 -2500 600 30 10 6.3 (1) (1) Unit TO-220FP V V A A A W W/C V V/ns V 40 (1) 35 0.27 2500 VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD(HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature -55 to 150 Storage temperature C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 10A, di/dt < 200 A/s, VDD=480V Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.83 62.5 300 TO-220FP 3.6 C/W C/W C Unit Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50V) Value 10 260 Unit A mJ 3/14 Electrical characteristics STP12NK60Z - STF12NK60Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS = 0 VDS = Max rating VDS = Max rating, TC=125C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 5A 3 3.75 0.53 Min. 600 1 50 10 4.5 0.64 Typ. Max. Unit V A A A V Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Td(on) Tr Td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=10V, ID =5A VDS = 25V, f = 1MHz, VGS = 0 Min. Typ. 9 1740 195 49 101 22.5 18.5 55 31.5 59 10 32 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 480V VDD = 300V, ID =5A, RG=4.7 VGS = 10V, (see Figure 16) VDD = 480V, ID = 10A, VGS = 10V (see Figure 17) 1. Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/14 STP12NK60Z - STF12NK60Z Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, VGS = 0 ISD = 10A, di/dt = 100A/s VDD = 50V, Tj = 25C (see Figure 21) ISD = 10A, di/dt = 100A/s VDD = 50V, Tj = 150C (see Figure 21) 358 3 17 460 4.2 18.2 Test conditions Min Typ. Max 10 40 1.6 Unit A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 7. Symbol BVGSO (1) Gate-source Zener diode Parameter Gate-Source breakdown voltage Test conditions Igs= 1mA (Open drain) Min 30 Typ Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/14 Electrical characteristics STP12NK60Z - STF12NK60Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/14 STP12NK60Z - STF12NK60Z Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics STP12NK60Z - STF12NK60Z Figure 14. Normalized breakdown voltage vs temperature Figure 15. Maximum avalanche energy vs temperature 8/14 STP12NK60Z - STF12NK60Z Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/14 Package mechanical data STP12NK60Z - STF12NK60Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP12NK60Z - STF12NK60Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/14 Package mechanical data STP12NK60Z - STF12NK60Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/14 G STP12NK60Z - STF12NK60Z Revision history 5 Revision history Table 8. Date 12-Apr-2004 06-Sep-2005 13-Sep-2005 05-Sep-2006 26-Apr-2007 Revision history Revision 1 2 3 4 5 First release Inserted ecopack indication Final version The document has been reformatted The document has been updated on 1: Electrical ratings Changes 13/14 STP12NK60Z - STF12NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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